High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, M. C. Tai, T. H. Liu, S. P. Wang, K. C. Chuang, C. T. Lee

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

Original languageEnglish
Pages (from-to)429-431
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number9
DOIs
Publication statusPublished - 1997 Sep 1

Fingerprint

Ion implantation
Quadrature phase shift keying
Monolithic microwave integrated circuits
Fabrication
gallium arsenide
Costs

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lai, Yeong Lin ; Chang, Edward Y. ; Chang, Chun Yen ; Tai, M. C. ; Liu, T. H. ; Wang, S. P. ; Chuang, K. C. ; Lee, C. T. / High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications. In: IEEE Electron Device Letters. 1997 ; Vol. 18, No. 9. pp. 429-431.
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High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Tai, M. C.; Liu, T. H.; Wang, S. P.; Chuang, K. C.; Lee, C. T.

In: IEEE Electron Device Letters, Vol. 18, No. 9, 01.09.1997, p. 429-431.

Research output: Contribution to journalArticle

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