Abstract
We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
| Original language | English |
|---|---|
| Pages (from-to) | 429-431 |
| Number of pages | 3 |
| Journal | IEEE Electron Device Letters |
| Volume | 18 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1997 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications. / Lai, Yeong Lin; Chang, Edward Y.; Chang, Chun Yen; Tai, M. C.; Liu, T. H.; Wang, S. P.; Chuang, K. C.; Lee, C. T.
In: IEEE Electron Device Letters, Vol. 18, No. 9, 01.09.1997, p. 429-431.Research output: Contribution to journal › Article
TY - JOUR
T1 - High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications
AU - Lai, Yeong Lin
AU - Chang, Edward Y.
AU - Chang, Chun Yen
AU - Tai, M. C.
AU - Liu, T. H.
AU - Wang, S. P.
AU - Chuang, K. C.
AU - Lee, C. T.
PY - 1997/9/1
Y1 - 1997/9/1
N2 - We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
AB - We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.
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U2 - 10.1109/55.622519
DO - 10.1109/55.622519
M3 - Article
AN - SCOPUS:0031235404
VL - 18
SP - 429
EP - 431
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
SN - 0741-3106
IS - 9
ER -