High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

Yeong Lin Lai; Edward Y. Chang; Chun Yen Chang; M. C. Tai; T. H. Liu; S. P. Wang; K. C. Chuang; C. T. Lee

doi:10.1109/55.622519

High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, M. C. Tai, T. H. Liu, S. P. Wang, K. C. Chuang, C. T. Lee

Department of Mechatronic Engineering

Research output: Contribution to journal › Article

15 Citations (Scopus)

Abstract

We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (W_g) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (P_adj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

Original language	English
Pages (from-to)	429-431
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	18
Issue number	9
DOIs	https://doi.org/10.1109/55.622519
Publication status	Published - 1997 Sep 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/55.622519

Fingerprint Dive into the research topics of 'High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications'. Together they form a unique fingerprint.

Cite this

@article{af07fa5e64244ade98cc41fafed333c8,

title = "High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications",

abstract = "We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.",

author = "Lai, {Yeong Lin} and Chang, {Edward Y.} and Chang, {Chun Yen} and Tai, {M. C.} and Liu, {T. H.} and Wang, {S. P.} and Chuang, {K. C.} and Lee, {C. T.}",

year = "1997",

month = sep,

day = "1",

doi = "10.1109/55.622519",

language = "English",

volume = "18",

pages = "429--431",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

AU - Lai, Yeong Lin

AU - Chang, Edward Y.

AU - Chang, Chun Yen

AU - Tai, M. C.

AU - Liu, T. H.

AU - Wang, S. P.

AU - Chuang, K. C.

AU - Lee, C. T.

PY - 1997/9/1

Y1 - 1997/9/1

N2 - We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

AB - We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

UR - http://www.scopus.com/inward/record.url?scp=0031235404&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031235404&partnerID=8YFLogxK

U2 - 10.1109/55.622519

DO - 10.1109/55.622519

M3 - Article

AN - SCOPUS:0031235404

VL - 18

SP - 429

EP - 431

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

SN - 0741-3106

IS - 9

ER -