High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications

Yeong Lin Lai, Edward Y. Chang, Chun Yen Chang, M. C. Tai, T. H. Liu, S. P. Wang, K. C. Chuang, C. T. Lee

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Abstract

We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.

Original languageEnglish
Pages (from-to)429-431
Number of pages3
JournalIEEE Electron Device Letters
Volume18
Issue number9
DOIs
Publication statusPublished - 1997 Sep 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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