High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si

Ray Hua Horng, Yi Chung Lien, Wei Chih Peng, Dong Sing Wuu, Chung Yang Tseng, Chi Hua Seieh, Man Fang Huang, Shi Jen Tsai, Jin Shiarng Liu

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Indium-tin oxide (ITO) used as the window layer and current-spreading layer for wafer-bonded AlGaInP/mirror/Si light-emitting diodes (MS LEDs) has been reported. The ITO films prepared by sputtering have low resistivity (2.1 × 10-4 Ω-cm) and high transmittance (> 90% in the visible region). The MS LEDs incorporating the ITO layer and In/ITO provide higher light output than ITO-free MS LEDs. They also exhibit a linear increase of a uniform distributed light output without radiation saturation as the injection current increases. Moreover, the MS LED, ITO/MS LED and ITO/In/MS LEDs provide 2.8, 3.0 and 3.4 times improvement in external power efficiency, respectively, as compared with the absorbing-substrate LED fabricated from the same AlGaInP LED wafer. Due to the inserted In layer that reduces the contact resistance between ITO and the GaAs contact layer without causing obvious absorption of the emitting light, the ITO/In/MS LEDs can achieve the highest power conversion efficiency among the LEDs studied.

Original languageEnglish
Pages (from-to)2747-2751
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number4 B
Publication statusPublished - 2001 Apr 1

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Tin oxides
indium oxides
Indium
tin oxides
Light emitting diodes
Luminance
brightness
Mirrors
light emitting diodes
wafers
mirrors
output
power efficiency
Contact resistance
contact resistance
Conversion efficiency
Oxide films
Sputtering
oxide films
transmittance

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Horng, R. H., Lien, Y. C., Peng, W. C., Wuu, D. S., Tseng, C. Y., Seieh, C. H., ... Liu, J. S. (2001). High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(4 B), 2747-2751.
Horng, Ray Hua ; Lien, Yi Chung ; Peng, Wei Chih ; Wuu, Dong Sing ; Tseng, Chung Yang ; Seieh, Chi Hua ; Huang, Man Fang ; Tsai, Shi Jen ; Liu, Jin Shiarng. / High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2001 ; Vol. 40, No. 4 B. pp. 2747-2751.
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abstract = "Indium-tin oxide (ITO) used as the window layer and current-spreading layer for wafer-bonded AlGaInP/mirror/Si light-emitting diodes (MS LEDs) has been reported. The ITO films prepared by sputtering have low resistivity (2.1 × 10-4 Ω-cm) and high transmittance (> 90{\%} in the visible region). The MS LEDs incorporating the ITO layer and In/ITO provide higher light output than ITO-free MS LEDs. They also exhibit a linear increase of a uniform distributed light output without radiation saturation as the injection current increases. Moreover, the MS LED, ITO/MS LED and ITO/In/MS LEDs provide 2.8, 3.0 and 3.4 times improvement in external power efficiency, respectively, as compared with the absorbing-substrate LED fabricated from the same AlGaInP LED wafer. Due to the inserted In layer that reduces the contact resistance between ITO and the GaAs contact layer without causing obvious absorption of the emitting light, the ITO/In/MS LEDs can achieve the highest power conversion efficiency among the LEDs studied.",
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Horng, RH, Lien, YC, Peng, WC, Wuu, DS, Tseng, CY, Seieh, CH, Huang, MF, Tsai, SJ & Liu, JS 2001, 'High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si', Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, vol. 40, no. 4 B, pp. 2747-2751.

High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si. / Horng, Ray Hua; Lien, Yi Chung; Peng, Wei Chih; Wuu, Dong Sing; Tseng, Chung Yang; Seieh, Chi Hua; Huang, Man Fang; Tsai, Shi Jen; Liu, Jin Shiarng.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 4 B, 01.04.2001, p. 2747-2751.

Research output: Contribution to journalArticle

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T1 - High-brightness wafer-bonded indium-tin oxide/light-emitting diode/mirror/Si

AU - Horng, Ray Hua

AU - Lien, Yi Chung

AU - Peng, Wei Chih

AU - Wuu, Dong Sing

AU - Tseng, Chung Yang

AU - Seieh, Chi Hua

AU - Huang, Man Fang

AU - Tsai, Shi Jen

AU - Liu, Jin Shiarng

PY - 2001/4/1

Y1 - 2001/4/1

N2 - Indium-tin oxide (ITO) used as the window layer and current-spreading layer for wafer-bonded AlGaInP/mirror/Si light-emitting diodes (MS LEDs) has been reported. The ITO films prepared by sputtering have low resistivity (2.1 × 10-4 Ω-cm) and high transmittance (> 90% in the visible region). The MS LEDs incorporating the ITO layer and In/ITO provide higher light output than ITO-free MS LEDs. They also exhibit a linear increase of a uniform distributed light output without radiation saturation as the injection current increases. Moreover, the MS LED, ITO/MS LED and ITO/In/MS LEDs provide 2.8, 3.0 and 3.4 times improvement in external power efficiency, respectively, as compared with the absorbing-substrate LED fabricated from the same AlGaInP LED wafer. Due to the inserted In layer that reduces the contact resistance between ITO and the GaAs contact layer without causing obvious absorption of the emitting light, the ITO/In/MS LEDs can achieve the highest power conversion efficiency among the LEDs studied.

AB - Indium-tin oxide (ITO) used as the window layer and current-spreading layer for wafer-bonded AlGaInP/mirror/Si light-emitting diodes (MS LEDs) has been reported. The ITO films prepared by sputtering have low resistivity (2.1 × 10-4 Ω-cm) and high transmittance (> 90% in the visible region). The MS LEDs incorporating the ITO layer and In/ITO provide higher light output than ITO-free MS LEDs. They also exhibit a linear increase of a uniform distributed light output without radiation saturation as the injection current increases. Moreover, the MS LED, ITO/MS LED and ITO/In/MS LEDs provide 2.8, 3.0 and 3.4 times improvement in external power efficiency, respectively, as compared with the absorbing-substrate LED fabricated from the same AlGaInP LED wafer. Due to the inserted In layer that reduces the contact resistance between ITO and the GaAs contact layer without causing obvious absorption of the emitting light, the ITO/In/MS LEDs can achieve the highest power conversion efficiency among the LEDs studied.

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