Growth of ternary silicon carbon nitride as a new wide bandgap material

L. C. Chen, C. K. Chen, D. M. Bhusari, K. H. Chen, S. L. Wei, Y. F. Chen, Y. C. Jong, Der-Yuh Lin, C. F. Li, Y. S. Huang

Research output: Contribution to journalConference article

6 Citations (Scopus)

Abstract

Growth of pure crystalline carbon nitride (c-CN) with crystal sizes large enough to enable measurement of its properties has not been achieved so far. We report here that incorporation of silicon in the growth of CN can promote formation of large, well faceted crystallites. Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using CH4, N2, and SiH4 gases. Auger electron spectroscopy, scanning electron microscopies, and X-ray diffraction spectroscopy have been employed to characterize the composition, the morphology and the structure of the films. The new crystalline ternary compound (C; Si)xNy exhibits hexagonal structure and consists of a network wherein the Si and C are believed to be substitutional elements. While the N content of the compound is about 35%, the extent of Si substitution varies from crystal to crystal. In some crystals, the Si content can be as low as 10%. Optical properties of the SiCN compounds have been studied by photoluminescence (PL) and piezoreflectance (PzR) spectroscopies. From the PzR measurement, we determine the band gap of the new crystals to be around 3.8 eV at room temperature. From the PL measurement, it is found that the compounds have a strong subband-gap emission centered around 2.8 eV at room temperature, which can be attributed to the effect of defects containing in the crystals.

Original languageEnglish
Pages (from-to)31-37
Number of pages7
JournalMaterials Research Society Symposium - Proceedings
Volume468
Publication statusPublished - 1997 Jan 1
EventProceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA
Duration: 1997 Apr 11997 Apr 4

Fingerprint

carbon nitrides
Carbon nitride
Silicon nitride
silicon nitrides
Energy gap
Crystals
crystals
Crystalline materials
Photoluminescence
Spectroscopy
photoluminescence
room temperature
Silicon
Auger electron spectroscopy
Plasma enhanced chemical vapor deposition
Crystallites
spectroscopy
crystallites
Auger spectroscopy
electron spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, L. C., Chen, C. K., Bhusari, D. M., Chen, K. H., Wei, S. L., Chen, Y. F., ... Huang, Y. S. (1997). Growth of ternary silicon carbon nitride as a new wide bandgap material. Materials Research Society Symposium - Proceedings, 468, 31-37.
Chen, L. C. ; Chen, C. K. ; Bhusari, D. M. ; Chen, K. H. ; Wei, S. L. ; Chen, Y. F. ; Jong, Y. C. ; Lin, Der-Yuh ; Li, C. F. ; Huang, Y. S. / Growth of ternary silicon carbon nitride as a new wide bandgap material. In: Materials Research Society Symposium - Proceedings. 1997 ; Vol. 468. pp. 31-37.
@article{7b3a76bf4b6e43b2946e8e42fa88da7e,
title = "Growth of ternary silicon carbon nitride as a new wide bandgap material",
abstract = "Growth of pure crystalline carbon nitride (c-CN) with crystal sizes large enough to enable measurement of its properties has not been achieved so far. We report here that incorporation of silicon in the growth of CN can promote formation of large, well faceted crystallites. Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using CH4, N2, and SiH4 gases. Auger electron spectroscopy, scanning electron microscopies, and X-ray diffraction spectroscopy have been employed to characterize the composition, the morphology and the structure of the films. The new crystalline ternary compound (C; Si)xNy exhibits hexagonal structure and consists of a network wherein the Si and C are believed to be substitutional elements. While the N content of the compound is about 35{\%}, the extent of Si substitution varies from crystal to crystal. In some crystals, the Si content can be as low as 10{\%}. Optical properties of the SiCN compounds have been studied by photoluminescence (PL) and piezoreflectance (PzR) spectroscopies. From the PzR measurement, we determine the band gap of the new crystals to be around 3.8 eV at room temperature. From the PL measurement, it is found that the compounds have a strong subband-gap emission centered around 2.8 eV at room temperature, which can be attributed to the effect of defects containing in the crystals.",
author = "Chen, {L. C.} and Chen, {C. K.} and Bhusari, {D. M.} and Chen, {K. H.} and Wei, {S. L.} and Chen, {Y. F.} and Jong, {Y. C.} and Der-Yuh Lin and Li, {C. F.} and Huang, {Y. S.}",
year = "1997",
month = "1",
day = "1",
language = "English",
volume = "468",
pages = "31--37",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Chen, LC, Chen, CK, Bhusari, DM, Chen, KH, Wei, SL, Chen, YF, Jong, YC, Lin, D-Y, Li, CF & Huang, YS 1997, 'Growth of ternary silicon carbon nitride as a new wide bandgap material', Materials Research Society Symposium - Proceedings, vol. 468, pp. 31-37.

Growth of ternary silicon carbon nitride as a new wide bandgap material. / Chen, L. C.; Chen, C. K.; Bhusari, D. M.; Chen, K. H.; Wei, S. L.; Chen, Y. F.; Jong, Y. C.; Lin, Der-Yuh; Li, C. F.; Huang, Y. S.

In: Materials Research Society Symposium - Proceedings, Vol. 468, 01.01.1997, p. 31-37.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth of ternary silicon carbon nitride as a new wide bandgap material

AU - Chen, L. C.

AU - Chen, C. K.

AU - Bhusari, D. M.

AU - Chen, K. H.

AU - Wei, S. L.

AU - Chen, Y. F.

AU - Jong, Y. C.

AU - Lin, Der-Yuh

AU - Li, C. F.

AU - Huang, Y. S.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - Growth of pure crystalline carbon nitride (c-CN) with crystal sizes large enough to enable measurement of its properties has not been achieved so far. We report here that incorporation of silicon in the growth of CN can promote formation of large, well faceted crystallites. Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using CH4, N2, and SiH4 gases. Auger electron spectroscopy, scanning electron microscopies, and X-ray diffraction spectroscopy have been employed to characterize the composition, the morphology and the structure of the films. The new crystalline ternary compound (C; Si)xNy exhibits hexagonal structure and consists of a network wherein the Si and C are believed to be substitutional elements. While the N content of the compound is about 35%, the extent of Si substitution varies from crystal to crystal. In some crystals, the Si content can be as low as 10%. Optical properties of the SiCN compounds have been studied by photoluminescence (PL) and piezoreflectance (PzR) spectroscopies. From the PzR measurement, we determine the band gap of the new crystals to be around 3.8 eV at room temperature. From the PL measurement, it is found that the compounds have a strong subband-gap emission centered around 2.8 eV at room temperature, which can be attributed to the effect of defects containing in the crystals.

AB - Growth of pure crystalline carbon nitride (c-CN) with crystal sizes large enough to enable measurement of its properties has not been achieved so far. We report here that incorporation of silicon in the growth of CN can promote formation of large, well faceted crystallites. Crystalline thin films of SiCN have been grown by microwave plasma-enhanced chemical vapor deposition using CH4, N2, and SiH4 gases. Auger electron spectroscopy, scanning electron microscopies, and X-ray diffraction spectroscopy have been employed to characterize the composition, the morphology and the structure of the films. The new crystalline ternary compound (C; Si)xNy exhibits hexagonal structure and consists of a network wherein the Si and C are believed to be substitutional elements. While the N content of the compound is about 35%, the extent of Si substitution varies from crystal to crystal. In some crystals, the Si content can be as low as 10%. Optical properties of the SiCN compounds have been studied by photoluminescence (PL) and piezoreflectance (PzR) spectroscopies. From the PzR measurement, we determine the band gap of the new crystals to be around 3.8 eV at room temperature. From the PL measurement, it is found that the compounds have a strong subband-gap emission centered around 2.8 eV at room temperature, which can be attributed to the effect of defects containing in the crystals.

UR - http://www.scopus.com/inward/record.url?scp=0030688772&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030688772&partnerID=8YFLogxK

M3 - Conference article

VL - 468

SP - 31

EP - 37

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

Chen LC, Chen CK, Bhusari DM, Chen KH, Wei SL, Chen YF et al. Growth of ternary silicon carbon nitride as a new wide bandgap material. Materials Research Society Symposium - Proceedings. 1997 Jan 1;468:31-37.