Abstract
A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
| Original language | English |
|---|---|
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 595 |
| Publication status | Published - 2000 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Growth of InN by MBE. / Chen, Wei-Li.
In: Materials Research Society Symposium - Proceedings, Vol. 595, 01.12.2000.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth of InN by MBE
AU - Chen, Wei-Li
PY - 2000/12/1
Y1 - 2000/12/1
N2 - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
AB - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
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UR - http://www.scopus.com/inward/citedby.url?scp=33751348287&partnerID=8YFLogxK
M3 - Article
VL - 595
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -