Growth of InN by MBE

Wei-Li Chen

Growth of InN by MBE

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original language	English
Journal	Materials Research Society Symposium - Proceedings
Volume	595
Publication status	Published - 2000 Dec 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Growth of InN by MBE",

abstract = "A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.",

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