Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original languageEnglish
Pages (from-to)W3.30.1 - W3.30.6
JournalMaterials Research Society Symposium - Proceedings
Volume595
Publication statusPublished - 2000 Jan 1
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1999 Nov 281999 Dec 3

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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