Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

Research output: Contribution to journalConference article

1 Citation (Scopus)

Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original languageEnglish
Pages (from-to)W3.30.1 - W3.30.6
JournalMaterials Research Society Symposium - Proceedings
Volume595
Publication statusPublished - 2000 Jan 1
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA
Duration: 1999 Nov 281999 Dec 3

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Reflection high energy electron diffraction
Experiments
dissociation
Transmission electron microscopy
Thin films
transmission electron microscopy
thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. Materials Research Society Symposium - Proceedings, 595, W3.30.1 - W3.30.6.
Chen, W. L. ; Gunshor, R. L. ; Han, Jung ; Higashimine, K. ; Otsuka, N. / Growth of InN by MBE. In: Materials Research Society Symposium - Proceedings. 2000 ; Vol. 595. pp. W3.30.1 - W3.30.6.
@article{03678edf718f47f38e8a08c924c92d07,
title = "Growth of InN by MBE",
abstract = "A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.",
author = "Chen, {W. L.} and Gunshor, {R. L.} and Jung Han and K. Higashimine and N. Otsuka",
year = "2000",
month = "1",
day = "1",
language = "English",
volume = "595",
pages = "W3.30.1 -- W3.30.6",
journal = "Materials Research Society Symposium - Proceedings",
issn = "0272-9172",
publisher = "Materials Research Society",

}

Chen, WL, Gunshor, RL, Han, J, Higashimine, K & Otsuka, N 2000, 'Growth of InN by MBE', Materials Research Society Symposium - Proceedings, vol. 595, pp. W3.30.1 - W3.30.6.

Growth of InN by MBE. / Chen, W. L.; Gunshor, R. L.; Han, Jung; Higashimine, K.; Otsuka, N.

In: Materials Research Society Symposium - Proceedings, Vol. 595, 01.01.2000, p. W3.30.1 - W3.30.6.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Growth of InN by MBE

AU - Chen, W. L.

AU - Gunshor, R. L.

AU - Han, Jung

AU - Higashimine, K.

AU - Otsuka, N.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

AB - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

UR - http://www.scopus.com/inward/record.url?scp=17044458549&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17044458549&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17044458549

VL - 595

SP - W3.30.1 - W3.30.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -

Chen WL, Gunshor RL, Han J, Higashimine K, Otsuka N. Growth of InN by MBE. Materials Research Society Symposium - Proceedings. 2000 Jan 1;595:W3.30.1 - W3.30.6.