Growth of InN by MBE

W. L. Chen; R. L. Gunshor; Jung Han; K. Higashimine; N. Otsuka

Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

Department of Electronic Engineering

Research output: Contribution to journal › Conference article

1 Citation (Scopus)

Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original language	English
Pages (from-to)	W3.30.1 - W3.30.6
Journal	Materials Research Society Symposium - Proceedings
Volume	595
Publication status	Published - 2000 Jan 1
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. Materials Research Society Symposium - Proceedings, 595, W3.30.1 - W3.30.6.

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title = "Growth of InN by MBE",

abstract = "A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.",

author = "Chen, {W. L.} and Gunshor, {R. L.} and Jung Han and K. Higashimine and N. Otsuka",

year = "2000",

month = jan,

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language = "English",

volume = "595",

pages = "W3.30.1 -- W3.30.6",

journal = "Materials Research Society Symposium - Proceedings",

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note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

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T1 - Growth of InN by MBE

AU - Chen, W. L.

AU - Gunshor, R. L.

AU - Han, Jung

AU - Higashimine, K.

AU - Otsuka, N.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

AB - A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

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M3 - Conference article

AN - SCOPUS:17044458549

VL - 595

SP - W3.30.1 - W3.30.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

Y2 - 28 November 1999 through 3 December 1999

ER -