Abstract
A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.
| Original language | English |
|---|---|
| Pages (from-to) | W3.30.1 - W3.30.6 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 595 |
| Publication status | Published - 2000 Jan 1 |
| Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: 1999 Nov 28 → 1999 Dec 3 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. Materials Research Society Symposium - Proceedings, 595, W3.30.1 - W3.30.6.