Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

Research output: Contribution to journalArticle

Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
Publication statusPublished - 2000 Dec 1

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Molecular beam epitaxy
Reflection high energy electron diffraction
Experiments
Transmission electron microscopy
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. MRS Internet Journal of Nitride Semiconductor Research, 5(SUPPL. 1).
Chen, W. L. ; Gunshor, R. L. ; Han, Jung ; Higashimine, K. ; Otsuka, N. / Growth of InN by MBE. In: MRS Internet Journal of Nitride Semiconductor Research. 2000 ; Vol. 5, No. SUPPL. 1.
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Chen, WL, Gunshor, RL, Han, J, Higashimine, K & Otsuka, N 2000, 'Growth of InN by MBE', MRS Internet Journal of Nitride Semiconductor Research, vol. 5, no. SUPPL. 1.

Growth of InN by MBE. / Chen, W. L.; Gunshor, R. L.; Han, Jung; Higashimine, K.; Otsuka, N.

In: MRS Internet Journal of Nitride Semiconductor Research, Vol. 5, No. SUPPL. 1, 01.12.2000.

Research output: Contribution to journalArticle

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Chen WL, Gunshor RL, Han J, Higashimine K, Otsuka N. Growth of InN by MBE. MRS Internet Journal of Nitride Semiconductor Research. 2000 Dec 1;5(SUPPL. 1).