Growth of InN by MBE

W. L. Chen, R. L. Gunshor, Jung Han, K. Higashimine, N. Otsuka

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Abstract

A series of experiments were performed to explore the growth of InN by Molecular Beam Epitaxy (MBE). The growth conditions were optimized based on the study of RHEED during growth and InN dissociation experiments. Characterization of the InN thin films were performed by various techniques such as TEM and XRD.

Original languageEnglish
JournalMRS Internet Journal of Nitride Semiconductor Research
Volume5
Issue numberSUPPL. 1
Publication statusPublished - 2000 Dec 1

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All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Chen, W. L., Gunshor, R. L., Han, J., Higashimine, K., & Otsuka, N. (2000). Growth of InN by MBE. MRS Internet Journal of Nitride Semiconductor Research, 5(SUPPL. 1).