Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

W. T. Yen; Yi-Cheng or Y. C. Lin; P. C. Yao; J. H. Ke; Y. L. Chen

doi:10.1016/j.apsusc.2009.12.047

Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

W. T. Yen, Yi-Cheng or Y. C. Lin, P. C. Yao, J. H. Ke, Y. L. Chen

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 ^-4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.

Original language	English
Pages (from-to)	3432-3437
Number of pages	6
Journal	Applied Surface Science
Volume	256
Issue number	11
DOIs	https://doi.org/10.1016/j.apsusc.2009.12.047
Publication status	Published - 2010 Mar 15

All Science Journal Classification (ASJC) codes

Surfaces, Coatings and Films

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title = "Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering",

abstract = " Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.",

author = "Yen, {W. T.} and Lin, {Yi-Cheng or Y. C.} and Yao, {P. C.} and Ke, {J. H.} and Chen, {Y. L.}",

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doi = "10.1016/j.apsusc.2009.12.047",

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T1 - Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

AU - Yen, W. T.

AU - Lin, Yi-Cheng or Y. C.

AU - Yao, P. C.

AU - Ke, J. H.

AU - Chen, Y. L.

PY - 2010/3/15

Y1 - 2010/3/15

N2 - Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.

AB - Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.

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