Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

W. T. Yen, Yi-Cheng or Y. C. Lin, P. C. Yao, J. H. Ke, Y. L. Chen

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.

Original languageEnglish
Pages (from-to)3432-3437
Number of pages6
JournalApplied Surface Science
Volume256
Issue number11
DOIs
Publication statusPublished - 2010 Mar 15

Fingerprint

Magnetron sputtering
Thin films
Film thickness
Carrier mobility
Optical band gaps
Optoelectronic devices
Transparency
Surface roughness
Glass
Substrates
Electric Conductivity

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86{\%} and optical band gap of 3.83 eV.",
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Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering. / Yen, W. T.; Lin, Yi-Cheng or Y. C.; Yao, P. C.; Ke, J. H.; Chen, Y. L.

In: Applied Surface Science, Vol. 256, No. 11, 15.03.2010, p. 3432-3437.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering

AU - Yen, W. T.

AU - Lin, Yi-Cheng or Y. C.

AU - Yao, P. C.

AU - Ke, J. H.

AU - Chen, Y. L.

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AB - Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.

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