Abstract
Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
| Original language | English |
|---|---|
| Pages (from-to) | 3432-3437 |
| Number of pages | 6 |
| Journal | Applied Surface Science |
| Volume | 256 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2010 Mar 15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
Cite this
}
Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering. / Yen, W. T.; Lin, Yi-Cheng or Y. C.; Yao, P. C.; Ke, J. H.; Chen, Y. L.
In: Applied Surface Science, Vol. 256, No. 11, 15.03.2010, p. 3432-3437.Research output: Contribution to journal › Article
TY - JOUR
T1 - Growth characteristics and properties of ZnO:Ga thin films prepared by pulsed DC magnetron sputtering
AU - Yen, W. T.
AU - Lin, Yi-Cheng or Y. C.
AU - Yao, P. C.
AU - Ke, J. H.
AU - Chen, Y. L.
PY - 2010/3/15
Y1 - 2010/3/15
N2 - Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
AB - Transparent conductive ZnO:Ga thin films were deposited on Corning 1737 glass substrate by pulsed direct current (DC) magnetron sputtering. The effects of process parameters, namely pulse frequency and film thickness on the structural and optoelectronic properties of ZnO:Ga thin films are evaluated. It shows that highly c-axis (0 0 2) oriented polycrystalline films with good visible transparency and electrical conductivity were prepared at a pulsed frequency of 10 kHz. Increasing the film thickness also enlarged the grain size and carrier mobility which will subsequently lead to the decrease in resistivity. In summary, ZnO:Ga thin film with the lowest electrical resistivity of 2.01 × 10 -4 Ω cm was obtained at a pulse frequency of 10 kHz with 500 nm in thickness. The surface RMS (root mean square) roughness of the film is 2.9 nm with visible transmittance around 86% and optical band gap of 3.83 eV.
UR - http://www.scopus.com/inward/record.url?scp=77649193489&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77649193489&partnerID=8YFLogxK
U2 - 10.1016/j.apsusc.2009.12.047
DO - 10.1016/j.apsusc.2009.12.047
M3 - Article
VL - 256
SP - 3432
EP - 3437
JO - Applied Surface Science
JF - Applied Surface Science
SN - 0169-4332
IS - 11
ER -