Abstract
The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.
| Original language | English |
|---|---|
| Pages (from-to) | 6384-6390 |
| Number of pages | 7 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 11 |
| Publication status | Published - 2001 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
Cite this
Shiao, H. P., Lee, H. Y., Lin, Y. J., Tu, Y. K., & Lee, C. T. (2001). Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(11), 6384-6390.