Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers

Hung Pin Shiao, Hsin Ying Lee, Yow-Jon Lin, Yuan Kuang Tu, Ching Ting Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.

Original languageEnglish
Pages (from-to)6384-6390
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume40
Issue number11
Publication statusPublished - 2001 Nov 1

Fingerprint

Well pumps
Semiconductor quantum wells
quantum wells
Pumps
pumps
aluminum
Aluminum
Erbium doped fiber amplifiers
Vapor phase epitaxy
Lasers
Epilayers
Organometallics
vapor phase epitaxy
erbium
lasers
far fields
low pressure
amplifiers
Wavelength
fibers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers. / Shiao, Hung Pin; Lee, Hsin Ying; Lin, Yow-Jon; Tu, Yuan Kuang; Lee, Ching Ting.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, No. 11, 01.11.2001, p. 6384-6390.

Research output: Contribution to journalArticle

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AU - Lee, Hsin Ying

AU - Lin, Yow-Jon

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AU - Lee, Ching Ting

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