Abstract
The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.
Original language | English |
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Pages (from-to) | 6384-6390 |
Number of pages | 7 |
Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
Volume | 40 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2001 Nov |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)