Growth and performance study of aluminum-free InGaAs/GaAs/InGaAsP strained quantum-well pump lasers

Hung Pin Shiao, Hsin Ying Lee, Yow Jon Lin, Yuan Kuang Tu, Ching Ting Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)


The growth of InGaP, InGaAs and InGaAsP epilayers lattice matched to GaAs using the low pressure organometallic vapor phase epitaxy (LP-OMVPE) system was investigated. For the application of erbium-doped fiber amplifiers (EDFAs), the emission wavelength and far-field pattern of the pump laser were designed. The optical and electrical performances of the resultant pump laser were measured.

Original languageEnglish
Pages (from-to)6384-6390
Number of pages7
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number11
Publication statusPublished - 2001 Nov 1


All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this