Growth and characterization of SnS2(1-x)Se2x alloys

Chi Feng Tsai, Der Yuh Lin, Tsung Shine Ko, Sheng Beng Hwang

Research output: Contribution to journalArticle

Abstract

In this study, SnS2(1-x)Se2x alloys layered crystals were grown by the chemical vapor transport method. The crystal structure characterization has been substantiated by X-ray diffraction (XRD) and transmission electron microscope technologies. From each sample's XRD pattern, the peaks corresponds to (001), (002), (003), (004), and (005) which were found and used to determine the lattice constants. The band gap energies modulated from 2.28 eV (SnS2) to 1.23 eV (SnSe2) with the increasing content of Se, which were verified by piezoreflectance (PzR) spectra and absorption spectra. By PzR spectra and absorption spectra, the empirical relation between band gap energies and composition ratio, according to the extended Vegard's law, has been predicted; accorded with a bowing parameter b of 0.56 and 0.54 eV, respectively.

Original languageEnglish
Article numberSBBH08
JournalJapanese Journal of Applied Physics
Volume58
DOIs
Publication statusPublished - 2019 Jan 1

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Absorption spectra
Energy gap
X ray diffraction
Bending (forming)
Diffraction patterns
Lattice constants
Electron microscopes
Crystal structure
Vapors
absorption spectra
Crystals
Chemical analysis
x rays
diffraction patterns
electron microscopes
vapors
crystal structure
diffraction
crystals

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Growth and characterization of SnS2(1-x)Se2x alloys",
abstract = "In this study, SnS2(1-x)Se2x alloys layered crystals were grown by the chemical vapor transport method. The crystal structure characterization has been substantiated by X-ray diffraction (XRD) and transmission electron microscope technologies. From each sample's XRD pattern, the peaks corresponds to (001), (002), (003), (004), and (005) which were found and used to determine the lattice constants. The band gap energies modulated from 2.28 eV (SnS2) to 1.23 eV (SnSe2) with the increasing content of Se, which were verified by piezoreflectance (PzR) spectra and absorption spectra. By PzR spectra and absorption spectra, the empirical relation between band gap energies and composition ratio, according to the extended Vegard's law, has been predicted; accorded with a bowing parameter b of 0.56 and 0.54 eV, respectively.",
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Growth and characterization of SnS2(1-x)Se2x alloys. / Tsai, Chi Feng; Lin, Der Yuh; Ko, Tsung Shine; Hwang, Sheng Beng.

In: Japanese Journal of Applied Physics, Vol. 58, SBBH08, 01.01.2019.

Research output: Contribution to journalArticle

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T1 - Growth and characterization of SnS2(1-x)Se2x alloys

AU - Tsai, Chi Feng

AU - Lin, Der Yuh

AU - Ko, Tsung Shine

AU - Hwang, Sheng Beng

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AB - In this study, SnS2(1-x)Se2x alloys layered crystals were grown by the chemical vapor transport method. The crystal structure characterization has been substantiated by X-ray diffraction (XRD) and transmission electron microscope technologies. From each sample's XRD pattern, the peaks corresponds to (001), (002), (003), (004), and (005) which were found and used to determine the lattice constants. The band gap energies modulated from 2.28 eV (SnS2) to 1.23 eV (SnSe2) with the increasing content of Se, which were verified by piezoreflectance (PzR) spectra and absorption spectra. By PzR spectra and absorption spectra, the empirical relation between band gap energies and composition ratio, according to the extended Vegard's law, has been predicted; accorded with a bowing parameter b of 0.56 and 0.54 eV, respectively.

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