Growth and characterization of a-plane Al x Ga 1-x N alloys by metalorganic chemical vapor deposition

H. M. Huang, S. C. Ling, J. R. Chen, Tsung-Shine Ko, J. C. Li, T. C. Lu, H. C. Kuo, S. C. Wang

Research output: Contribution to journalArticle

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Abstract

The non-polar a-plane Al x Ga 1-x N alloys on GaN epitaxial layer with different Al compositions (0≤x≤0.2) were grown on r-plane (1 1- 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0≤x≤0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition.

Original languageEnglish
Pages (from-to)869-873
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number6
DOIs
Publication statusPublished - 2010 Mar 1

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Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Photoluminescence
Chemical analysis
photoluminescence
Surface morphology
Low pressure chemical vapor deposition
Aluminum Oxide
Epitaxial layers
Sapphire
flat surfaces
sapphire
x rays
roughness
templates
low pressure
Surface roughness
X ray diffraction
X rays
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Huang, H. M. ; Ling, S. C. ; Chen, J. R. ; Ko, Tsung-Shine ; Li, J. C. ; Lu, T. C. ; Kuo, H. C. ; Wang, S. C. / Growth and characterization of a-plane Al x Ga 1-x N alloys by metalorganic chemical vapor deposition In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 6. pp. 869-873.
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Growth and characterization of a-plane Al x Ga 1-x N alloys by metalorganic chemical vapor deposition . / Huang, H. M.; Ling, S. C.; Chen, J. R.; Ko, Tsung-Shine; Li, J. C.; Lu, T. C.; Kuo, H. C.; Wang, S. C.

In: Journal of Crystal Growth, Vol. 312, No. 6, 01.03.2010, p. 869-873.

Research output: Contribution to journalArticle

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AU - Ling, S. C.

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AU - Ko, Tsung-Shine

AU - Li, J. C.

AU - Lu, T. C.

AU - Kuo, H. C.

AU - Wang, S. C.

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N2 - The non-polar a-plane Al x Ga 1-x N alloys on GaN epitaxial layer with different Al compositions (0≤x≤0.2) were grown on r-plane (1 1- 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0≤x≤0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition.

AB - The non-polar a-plane Al x Ga 1-x N alloys on GaN epitaxial layer with different Al compositions (0≤x≤0.2) were grown on r-plane (1 1- 0 2) sapphire substrates by using low-pressure metalorganic chemical vapor deposition (MOCVD) and the Al composition x were estimated from the X-ray diffraction measurements. According to the result of asymmetric X-ray reciprocal space mapping, AlGaN layer was coherently strained to the underlying GaN template. The a-plane AlGaN alloy with relatively lower Al composition showed a flat surface with reduction of pits. The best mean roughness of the surface morphology was 1.18 nm. The photoluminescence (PL) result revealed that the PL peak position shifted from 3.42 to 3.87 eV with 0≤x≤0.2. Apart from the shifted peak position with increasing Al content, the PL emission intensity and surface morphology of the a-plane AlGaN alloy with relatively low Al content show slightly better characteristics than that of the a-plane GaN and AlGaN with higher Al composition.

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