Abstract
In this research, we study the geometry effects of polycrystalline pentacene based Thin Film Transistor (TFT), including the short channel effect and the narrow width channel width effect. A series of different channel width/length TFTs were fabricated to observe the mobility and threshold voltage variation.
| Original language | English |
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| Publication status | Published - 2009 Dec 1 |
| Event | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 - Taipei, Taiwan Duration: 2009 Apr 27 → 2009 Apr 30 |
Other
| Other | 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009 |
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| Country | Taiwan |
| City | Taipei |
| Period | 09-04-27 → 09-04-30 |
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All Science Journal Classification (ASJC) codes
- Computer Graphics and Computer-Aided Design
- Computer Science Applications
- Human-Computer Interaction
Cite this
Wang, Y-W., Liu, D. Z., & Hong, M. Y. (2009). Geometry effect of the polycrystalline pentacene thin film transisor with ITO electrodes. Paper presented at 2009 International Display Manufacturing Conference, 3D Systems and Applications, and Asia Display, IDMC/3DSA/Asia Display 2009, Taipei, Taiwan.