Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures

Simon A. Svatek, Elisa Antolin, Der Yuh Lin, Riccardo Frisenda, Christoph Reuter, Aday J. Molina-Mendoza, Manuel Muñoz, Nicolás Agraït, Tsung Shine Ko, David Perez De Lara, Andres Castellanos-Gomez

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

p-n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.

Original languageEnglish
Pages (from-to)854-861
Number of pages8
JournalJournal of Materials Chemistry C
Volume5
Issue number4
DOIs
Publication statusPublished - 2017 Jan 1

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Photovoltaic effects
Optoelectronic devices
Transition metals
Diodes
R Factors
Dark currents
Chemical stability
Open circuit voltage
Photocurrents
Quantum efficiency
Electric space charge
Heterojunctions
Doping (additives)
Air
Costs

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

Cite this

Svatek, S. A., Antolin, E., Lin, D. Y., Frisenda, R., Reuter, C., Molina-Mendoza, A. J., ... Castellanos-Gomez, A. (2017). Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures. Journal of Materials Chemistry C, 5(4), 854-861. https://doi.org/10.1039/c6tc04699a
Svatek, Simon A. ; Antolin, Elisa ; Lin, Der Yuh ; Frisenda, Riccardo ; Reuter, Christoph ; Molina-Mendoza, Aday J. ; Muñoz, Manuel ; Agraït, Nicolás ; Ko, Tsung Shine ; De Lara, David Perez ; Castellanos-Gomez, Andres. / Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures. In: Journal of Materials Chemistry C. 2017 ; Vol. 5, No. 4. pp. 854-861.
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Svatek, SA, Antolin, E, Lin, DY, Frisenda, R, Reuter, C, Molina-Mendoza, AJ, Muñoz, M, Agraït, N, Ko, TS, De Lara, DP & Castellanos-Gomez, A 2017, 'Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures', Journal of Materials Chemistry C, vol. 5, no. 4, pp. 854-861. https://doi.org/10.1039/c6tc04699a

Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures. / Svatek, Simon A.; Antolin, Elisa; Lin, Der Yuh; Frisenda, Riccardo; Reuter, Christoph; Molina-Mendoza, Aday J.; Muñoz, Manuel; Agraït, Nicolás; Ko, Tsung Shine; De Lara, David Perez; Castellanos-Gomez, Andres.

In: Journal of Materials Chemistry C, Vol. 5, No. 4, 01.01.2017, p. 854-861.

Research output: Contribution to journalArticle

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AU - Svatek, Simon A.

AU - Antolin, Elisa

AU - Lin, Der Yuh

AU - Frisenda, Riccardo

AU - Reuter, Christoph

AU - Molina-Mendoza, Aday J.

AU - Muñoz, Manuel

AU - Agraït, Nicolás

AU - Ko, Tsung Shine

AU - De Lara, David Perez

AU - Castellanos-Gomez, Andres

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N2 - p-n junctions based on vertically stacked single or few-layer transition metal dichalcogenides (TMDCs) have attracted substantial scientific interest. Due to the propensity of TMDCs to show exclusively one type of conductivity, n- or p-type, heterojunctions of different materials are typically fabricated to produce diode-like current rectification and photovoltaic response. Recently, artificial, stable and substitutional doping of MoS2 into n- and p-type materials has been demonstrated. MoS2 is an interesting material for use in optoelectronic applications due to its potential of low-cost production in large quantities, strong light-matter interactions and chemical stability. Here we report the characterization of the optoelectronic properties of vertical homojunctions made by stacking few-layer flakes of MoS2:Fe (n-type) and MoS2:Nb (p-type). The junctions exhibit a peak external quantum efficiency of 4.7% and a maximum open circuit voltage of 0.51 V; they are stable in air; and their rectification characteristics and photovoltaic response are in excellent agreement with the Shockley diode model. The gate-tunability of the maximum output power, the ideality factor and the shunt resistance indicate that the dark current is dominated by trap-assisted recombination and that the photocurrent collection depends strongly on the spatial extent of the space charge region. We demonstrate a response time faster than 80 ms and highlight the potential to integrate such devices into quasi-transparent and flexible optoelectronics.

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Svatek SA, Antolin E, Lin DY, Frisenda R, Reuter C, Molina-Mendoza AJ et al. Gate tunable photovoltaic effect in MoS2 vertical p-n homostructures. Journal of Materials Chemistry C. 2017 Jan 1;5(4):854-861. https://doi.org/10.1039/c6tc04699a