Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

Sheng Horng Yen, Mei Ling Chen, Yen Kuang Kuo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-μm semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-μm InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers.

Original languageEnglish
Pages (from-to)1432-1436
Number of pages5
JournalOptics and Laser Technology
Volume39
Issue number7
DOIs
Publication statusPublished - 2007 Oct 1

Fingerprint

Semiconductor quantum wells
Semiconductor lasers
semiconductor lasers
thresholds
quantum wells
Current density
Tensile strain
current density
Transparency
Carrier concentration
simulation
aluminum gallium arsenides
Lasers
valence
lasers
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-μm semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-μm InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers.",
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Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers. / Yen, Sheng Horng; Chen, Mei Ling; Kuo, Yen Kuang.

In: Optics and Laser Technology, Vol. 39, No. 7, 01.10.2007, p. 1432-1436.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Gain and threshold properties of InGaAsN/GaAsN material system for 1.3-μm semiconductor lasers

AU - Yen, Sheng Horng

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AB - The gain properties and valence subbands of InGaAsN/GaAsN quantum-well structures are numerically investigated with a self-consistent LASTIP simulation program. The simulation results show that the InGaAsN/GaAsN has lower transparency carrier density than the conventional InGaAsP/InP material system for 1.3-μm semiconductor lasers. The material gain and radiative current density of InGaAsN/GaAsN with different compressive strains in quantum well and tensile strains in barrier are also studied. The material gain and radiative current density as functions of strain in quantum well and barrier are determined. The simulation results suggest that the laser performance and Auger recombination rate of the 1.3-μm InGaAsN semiconductor laser may be markedly improved when the traditional GaAs barriers are replaced with the AlGaAs graded barriers.

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