Abstract
In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
| Original language | English |
|---|---|
| Pages | 144-147 |
| Number of pages | 4 |
| Publication status | Published - 1999 Dec 1 |
| Event | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: 1999 Jun 26 → 1999 Jun 26 |
Other
| Other | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) |
|---|---|
| City | Shatin, Hong Kong |
| Period | 99-06-26 → 99-06-26 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. / Lai, Yeong-Lin; Chang, Edward Y.; Chang, C. Y.; Liu, Don Gey; Her, Man Long; Shiau, Miin Shyue; Yang, Shui Yuan; Chuang, K. C.
1999. 144-147 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .Research output: Contribution to conference › Paper
TY - CONF
T1 - GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications
AU - Lai, Yeong-Lin
AU - Chang, Edward Y.
AU - Chang, C. Y.
AU - Liu, Don Gey
AU - Her, Man Long
AU - Shiau, Miin Shyue
AU - Yang, Shui Yuan
AU - Chuang, K. C.
PY - 1999/12/1
Y1 - 1999/12/1
N2 - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
AB - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
UR - http://www.scopus.com/inward/record.url?scp=0033296107&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033296107&partnerID=8YFLogxK
M3 - Paper
AN - SCOPUS:0033296107
SP - 144
EP - 147
ER -