GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Yeong-Lin Lai, Edward Y. Chang, C. Y. Chang, Don Gey Liu, Man Long Her, Miin Shyue Shiau, Shui Yuan Yang, K. C. Chuang

Research output: Contribution to conferencePaper

Abstract

In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

Original languageEnglish
Pages144-147
Number of pages4
Publication statusPublished - 1999 Dec 1
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 1999 Jun 261999 Jun 26

Other

Other1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period99-06-2699-06-26

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Drain current
Transconductance
Local area networks
Ion implantation
Communication
Electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lai, Y-L., Chang, E. Y., Chang, C. Y., Liu, D. G., Her, M. L., Shiau, M. S., ... Chuang, K. C. (1999). GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. 144-147. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .
Lai, Yeong-Lin ; Chang, Edward Y. ; Chang, C. Y. ; Liu, Don Gey ; Her, Man Long ; Shiau, Miin Shyue ; Yang, Shui Yuan ; Chuang, K. C. / GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .4 p.
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abstract = "In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4{\%} at a low drain voltage of 2.5 V.",
author = "Yeong-Lin Lai and Chang, {Edward Y.} and Chang, {C. Y.} and Liu, {Don Gey} and Her, {Man Long} and Shiau, {Miin Shyue} and Yang, {Shui Yuan} and Chuang, {K. C.}",
year = "1999",
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note = "1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) ; Conference date: 26-06-1999 Through 26-06-1999",

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Lai, Y-L, Chang, EY, Chang, CY, Liu, DG, Her, ML, Shiau, MS, Yang, SY & Chuang, KC 1999, 'GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications' Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, 99-06-26 - 99-06-26, pp. 144-147.

GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. / Lai, Yeong-Lin; Chang, Edward Y.; Chang, C. Y.; Liu, Don Gey; Her, Man Long; Shiau, Miin Shyue; Yang, Shui Yuan; Chuang, K. C.

1999. 144-147 Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .

Research output: Contribution to conferencePaper

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T1 - GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

AU - Lai, Yeong-Lin

AU - Chang, Edward Y.

AU - Chang, C. Y.

AU - Liu, Don Gey

AU - Her, Man Long

AU - Shiau, Miin Shyue

AU - Yang, Shui Yuan

AU - Chuang, K. C.

PY - 1999/12/1

Y1 - 1999/12/1

N2 - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

AB - In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

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Lai Y-L, Chang EY, Chang CY, Liu DG, Her ML, Shiau MS et al. GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. 1999. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .