Abstract
In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.
| Original language | English |
|---|---|
| Pages | 144-147 |
| Number of pages | 4 |
| Publication status | Published - 1999 Dec 1 |
| Event | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong Duration: 1999 Jun 26 → 1999 Jun 26 |
Other
| Other | 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) |
|---|---|
| City | Shatin, Hong Kong |
| Period | 99-06-26 → 99-06-26 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Lai, Y-L., Chang, E. Y., Chang, C. Y., Liu, D. G., Her, M. L., Shiau, M. S., Yang, S. Y., & Chuang, K. C. (1999). GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications. 144-147. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .