GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications

Yeong-Lin Lai, Edward Y. Chang, C. Y. Chang, Don Gey Liu, Man Long Her, Miin Shyue Shiau, Shui Yuan Yang, K. C. Chuang

Research output: Contribution to conferencePaper

Abstract

In this paper, we presents a GaAs power MESFETs fabricated by the ion implantation technology for 2.4-GHz wireless communication applications. The MESFET exhibited a saturation drain current of 850 mA and a maximum transconductance of 145 mS/mm. The 3.36-mm-wide MESFET operating at 2.4 GHz demonstrated an output power of 24.7 dBm and a power-added efficiency of 56.4% at a low drain voltage of 2.5 V.

Original languageEnglish
Pages144-147
Number of pages4
Publication statusPublished - 1999 Dec 1
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 1999 Jun 261999 Jun 26

Other

Other1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period99-06-2699-06-26

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'GaAs power MESFET's fabricated by ion implantation technology for 2.4-GHz wireless LAN applications'. Together they form a unique fingerprint.

Cite this