Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy

M. C. Kuo, C. S. Yang, P. Y. Tseng, J. Lee, J. L. Shen, W. C. Chou, Y. T. Shih, C. T. Ku, M. C. Lee, W. K. Chen

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Abstract

Self-assembled ZnTe quantum dot structures were grown by molecular beam epitaxy on GaAs substrates with a 200 nm ZnSe buffer layer. Surface morphology was studied by atomic force microscopy. A three-dimensional Volmer-Weber growth mode was identified. Two types of dots were observed. Strong photoluminescence observed at 1.9-2.2 eV was attributed to emission from the large type II ZnTe quantum dots. Emission from the smaller ZnTe quantum dots was observed at an energy of around 2.26 eV. The density of the larger and smaller dots was approximately 108/cm2 and 109/cm2, respectively.

Original languageEnglish
Pages (from-to)533-537
Number of pages5
JournalJournal of Crystal Growth
Volume242
Issue number3-4
DOIs
Publication statusPublished - 2002 Jul

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All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Kuo, M. C., Yang, C. S., Tseng, P. Y., Lee, J., Shen, J. L., Chou, W. C., Shih, Y. T., Ku, C. T., Lee, M. C., & Chen, W. K. (2002). Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxy. Journal of Crystal Growth, 242(3-4), 533-537. https://doi.org/10.1016/S0022-0248(02)01421-5