Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy

C. Deng, T. W. Sigmon, Jong-Ching Wu, M. N. Wybourne, J. Rack

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

(100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.

Original languageEnglish
Pages (from-to)3734-3736
Number of pages3
JournalApplied Physics Letters
Volume68
Issue number26
DOIs
Publication statusPublished - 1996 Dec 1

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epitaxy
pulsed lasers
wire
Auger spectroscopy
electron spectroscopy
electron microscopy
atomic force microscopy
transmission electron microscopy
defects

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Deng, C. ; Sigmon, T. W. ; Wu, Jong-Ching ; Wybourne, M. N. ; Rack, J. / Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy. In: Applied Physics Letters. 1996 ; Vol. 68, No. 26. pp. 3734-3736.
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Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy. / Deng, C.; Sigmon, T. W.; Wu, Jong-Ching; Wybourne, M. N.; Rack, J.

In: Applied Physics Letters, Vol. 68, No. 26, 01.12.1996, p. 3734-3736.

Research output: Contribution to journalArticle

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