Abstract
(100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 3734-3736 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 68 |
| Issue number | 26 |
| DOIs | |
| Publication status | Published - 1996 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy. / Deng, C.; Sigmon, T. W.; Wu, Jong-Ching; Wybourne, M. N.; Rack, J.
In: Applied Physics Letters, Vol. 68, No. 26, 01.12.1996, p. 3734-3736.Research output: Contribution to journal › Article
TY - JOUR
T1 - Formation and characterization of ultrasmall dimension GeSi wire structure by using pulsed laser-induced epitaxy
AU - Deng, C.
AU - Sigmon, T. W.
AU - Wu, Jong-Ching
AU - Wybourne, M. N.
AU - Rack, J.
PY - 1996/12/1
Y1 - 1996/12/1
N2 - (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.
AB - (100)Si substrates are patterned with arrays of Ge wires ∼60 nm in width and ∼6 nm in thickness. Ultrasmall dimension GeSi surface wire structures are then formed in Si in a pulsed laser-induced epitaxy process. The wire structures are analyzed by secondary electron microscopy, atomic force microscopy, Auger electron spectroscopy, and cross-sectional transmission electron microscopy. No defects are observed in the wires structures. However, significant side diffusion of Ge, much more than the vertical diffusion occurred during the ∼40 ns pulsed laser-induced epitaxy process, is observed in the Si substrate. Surface evolution is also observed. Possible explanations for the abnormal Ge side diffusion are discussed.
UR - http://www.scopus.com/inward/record.url?scp=11744274369&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=11744274369&partnerID=8YFLogxK
U2 - 10.1063/1.115989
DO - 10.1063/1.115989
M3 - Article
AN - SCOPUS:11744274369
VL - 68
SP - 3734
EP - 3736
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 26
ER -