Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, Edward Yi Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

Original languageEnglish
Pages (from-to)7204-7208
Number of pages5
JournalThin Solid Films
Volume518
Issue number24
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Silicon nitride
silicon nitrides
Solar cells
solar cells
Finite element method
Wavelength
wavelengths
reflectance
Antireflection coatings
antireflection coatings
p-n junctions
silicon nitride
Geometry
geometry
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Lee, Huang Ming ; Sahoo, Kartika Chandra ; Li, Yiming ; Wu, Jong-Ching ; Chang, Edward Yi. / Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications. In: Thin Solid Films. 2010 ; Vol. 518, No. 24. pp. 7204-7208.
@article{789bec58d3734e339209eefde58ab0df,
title = "Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications",
abstract = "We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98{\%} in efficiency than that of single layer antireflection coatings.",
author = "Lee, {Huang Ming} and Sahoo, {Kartika Chandra} and Yiming Li and Jong-Ching Wu and Chang, {Edward Yi}",
year = "2010",
month = "10",
day = "1",
doi = "10.1016/j.tsf.2010.04.078",
language = "English",
volume = "518",
pages = "7204--7208",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "24",

}

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications. / Lee, Huang Ming; Sahoo, Kartika Chandra; Li, Yiming; Wu, Jong-Ching; Chang, Edward Yi.

In: Thin Solid Films, Vol. 518, No. 24, 01.10.2010, p. 7204-7208.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

AU - Lee, Huang Ming

AU - Sahoo, Kartika Chandra

AU - Li, Yiming

AU - Wu, Jong-Ching

AU - Chang, Edward Yi

PY - 2010/10/1

Y1 - 2010/10/1

N2 - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

AB - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

UR - http://www.scopus.com/inward/record.url?scp=77956876601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956876601&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.04.078

DO - 10.1016/j.tsf.2010.04.078

M3 - Article

AN - SCOPUS:77956876601

VL - 518

SP - 7204

EP - 7208

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 24

ER -