Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang Ming Lee; Kartika Chandra Sahoo; Yiming Li; Jong-Ching Wu; Edward Yi Chang

doi:10.1016/j.tsf.2010.04.078

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, Edward Yi Chang

Department of Physics

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We numerically calculate the spectral reflectivity of the silicon nitride (Si ₃ N ₄ ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si ₃ N ₄ SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si ₃ N ₄ SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si ₃ N ₄ SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

Original language	English
Pages (from-to)	7204-7208
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2010.04.078
Publication status	Published - 2010 Oct 1

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Lee, H. M., Sahoo, K. C., Li, Y., Wu, J-C., & Chang, E. Y. (2010). Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications. Thin Solid Films, 518(24), 7204-7208. https://doi.org/10.1016/j.tsf.2010.04.078

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abstract = " We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.",

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10.1016/j.tsf.2010.04.078