Abstract
We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.
| Original language | English |
|---|---|
| Pages (from-to) | 7204-7208 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 2010 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
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Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications. / Lee, Huang Ming; Sahoo, Kartika Chandra; Li, Yiming; Wu, Jong-Ching; Chang, Edward Yi.
In: Thin Solid Films, Vol. 518, No. 24, 01.10.2010, p. 7204-7208.Research output: Contribution to journal › Article
TY - JOUR
T1 - Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications
AU - Lee, Huang Ming
AU - Sahoo, Kartika Chandra
AU - Li, Yiming
AU - Wu, Jong-Ching
AU - Chang, Edward Yi
PY - 2010/10/1
Y1 - 2010/10/1
N2 - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.
AB - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.
UR - http://www.scopus.com/inward/record.url?scp=77956876601&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956876601&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.04.078
DO - 10.1016/j.tsf.2010.04.078
M3 - Article
AN - SCOPUS:77956876601
VL - 518
SP - 7204
EP - 7208
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 24
ER -