Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang Ming Lee; Kartika Chandra Sahoo; Yiming Li; Jong-Ching Wu; Edward Yi Chang

doi:10.1016/j.tsf.2010.04.078

Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

Huang Ming Lee, Kartika Chandra Sahoo, Yiming Li, Jong-Ching Wu, Edward Yi Chang

Department of Physics

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

We numerically calculate the spectral reflectivity of the silicon nitride (Si ₃ N ₄ ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si ₃ N ₄ SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si ₃ N ₄ SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si ₃ N ₄ SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

Original language	English
Pages (from-to)	7204-7208
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	24
DOIs	https://doi.org/10.1016/j.tsf.2010.04.078
Publication status	Published - 2010 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2010.04.078

Fingerprint Dive into the research topics of 'Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications'. Together they form a unique fingerprint.

Cite this

@article{789bec58d3734e339209eefde58ab0df,

title = "Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications",

abstract = " We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.",

author = "Lee, {Huang Ming} and Sahoo, {Kartika Chandra} and Yiming Li and Jong-Ching Wu and Chang, {Edward Yi}",

year = "2010",

month = oct,

day = "1",

doi = "10.1016/j.tsf.2010.04.078",

language = "English",

volume = "518",

pages = "7204--7208",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "24",

}

TY - JOUR

T1 - Finite element analysis of antireflective silicon nitride sub-wavelength structures for solar cell applications

AU - Lee, Huang Ming

AU - Sahoo, Kartika Chandra

AU - Li, Yiming

AU - Wu, Jong-Ching

AU - Chang, Edward Yi

PY - 2010/10/1

Y1 - 2010/10/1

N2 - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

AB - We numerically calculate the spectral reflectivity of the silicon nitride (Si 3 N 4 ) sub-wavelength structure (SWS) using a two-dimensional finite element simulation. The geometry-dependent effective reflectance of the Si 3 N 4 SWS over the wavelength ranging from 400 nm to 1000 nm is examined and the structure of Si 3 N 4 SWS is further optimized for the lowest effective reflectance. A p-n junction solar cell efficiency based on the optimized Si 3 N 4 SWS is also calculated, resulting in an improvement of 0.98% in efficiency than that of single layer antireflection coatings.

UR - http://www.scopus.com/inward/record.url?scp=77956876601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956876601&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2010.04.078

DO - 10.1016/j.tsf.2010.04.078

M3 - Article

AN - SCOPUS:77956876601

VL - 518

SP - 7204

EP - 7208

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 24

ER -