Filling through-silicon vias with conductive ferromagnetic silver-iron composite

Chung Han Lu, Kerwin Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.

Original languageEnglish
Title of host publication9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages366-369
Number of pages4
ISBN (Electronic)9781479947270
DOIs
Publication statusPublished - 2014 Sep 23
Event9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States
Duration: 2014 Apr 132014 Apr 16

Publication series

Name9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
CountryUnited States
CityWaikiki Beach
Period14-04-1314-04-16

Fingerprint

Silver
Iron
Silicon
Composite materials
Insulating materials
Leakage currents
Curing
Current density
Sintering
Electric fields
Vacuum
Nanoparticles
Fabrication
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Lu, C. H., & Wang, K. (2014). Filling through-silicon vias with conductive ferromagnetic silver-iron composite. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 (pp. 366-369). [6908828] (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2014.6908828
Lu, Chung Han ; Wang, Kerwin. / Filling through-silicon vias with conductive ferromagnetic silver-iron composite. 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 366-369 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).
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abstract = "This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.",
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Lu, CH & Wang, K 2014, Filling through-silicon vias with conductive ferromagnetic silver-iron composite. in 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014., 6908828, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Institute of Electrical and Electronics Engineers Inc., pp. 366-369, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Waikiki Beach, United States, 14-04-13. https://doi.org/10.1109/NEMS.2014.6908828

Filling through-silicon vias with conductive ferromagnetic silver-iron composite. / Lu, Chung Han; Wang, Kerwin.

9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 366-369 6908828 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.

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Lu CH, Wang K. Filling through-silicon vias with conductive ferromagnetic silver-iron composite. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 366-369. 6908828. (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). https://doi.org/10.1109/NEMS.2014.6908828