TY - GEN
T1 - Filling through-silicon vias with conductive ferromagnetic silver-iron composite
AU - Lu, Chung Han
AU - Wang, Kerwin
PY - 2014/9/23
Y1 - 2014/9/23
N2 - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
AB - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
UR - http://www.scopus.com/inward/record.url?scp=84908620207&partnerID=8YFLogxK
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U2 - 10.1109/NEMS.2014.6908828
DO - 10.1109/NEMS.2014.6908828
M3 - Conference contribution
AN - SCOPUS:84908620207
T3 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
SP - 366
EP - 369
BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Y2 - 13 April 2014 through 16 April 2014
ER -