Abstract
This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
| Original language | English |
|---|---|
| Title of host publication | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 366-369 |
| Number of pages | 4 |
| ISBN (Electronic) | 9781479947270 |
| DOIs | |
| Publication status | Published - 2014 Sep 23 |
| Event | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States Duration: 2014 Apr 13 → 2014 Apr 16 |
Publication series
| Name | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 |
|---|
Other
| Other | 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 |
|---|---|
| Country | United States |
| City | Waikiki Beach |
| Period | 14-04-13 → 14-04-16 |
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All Science Journal Classification (ASJC) codes
- Control and Systems Engineering
- Electrical and Electronic Engineering
Cite this
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Filling through-silicon vias with conductive ferromagnetic silver-iron composite. / Lu, Chung Han; Wang, Kerwin.
9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 366-369 6908828 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Filling through-silicon vias with conductive ferromagnetic silver-iron composite
AU - Lu, Chung Han
AU - Wang, Kerwin
PY - 2014/9/23
Y1 - 2014/9/23
N2 - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
AB - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.
UR - http://www.scopus.com/inward/record.url?scp=84908620207&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84908620207&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2014.6908828
DO - 10.1109/NEMS.2014.6908828
M3 - Conference contribution
T3 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
SP - 366
EP - 369
BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
PB - Institute of Electrical and Electronics Engineers Inc.
ER -