Filling through-silicon vias with conductive ferromagnetic silver-iron composite

Chung Han Lu; Kerwin Wang

doi:10.1109/NEMS.2014.6908828

Filling through-silicon vias with conductive ferromagnetic silver-iron composite

Chung Han Lu, Kerwin Wang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×10⁶ V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×10⁷ A/m². The leakage current is 2×10^-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.

Original language	English
Title of host publication	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	366-369
Number of pages	4
ISBN (Electronic)	9781479947270
DOIs	https://doi.org/10.1109/NEMS.2014.6908828
Publication status	Published - 2014 Sep 23
Event	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 - Waikiki Beach, United States Duration: 2014 Apr 13 → 2014 Apr 16

Publication series

Name	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Other

Other	9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014
Country	United States
City	Waikiki Beach
Period	14-04-13 → 14-04-16

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All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Cite this

Lu, C. H., & Wang, K. (2014). Filling through-silicon vias with conductive ferromagnetic silver-iron composite. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 (pp. 366-369). [6908828] (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NEMS.2014.6908828

Lu, Chung Han ; Wang, Kerwin. / Filling through-silicon vias with conductive ferromagnetic silver-iron composite. 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. pp. 366-369 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

@inproceedings{7fc365058a2148c3b5337dd50e3303d3,

title = "Filling through-silicon vias with conductive ferromagnetic silver-iron composite",

abstract = "This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.",

author = "Lu, {Chung Han} and Kerwin Wang",

year = "2014",

month = sep

day = "23",

doi = "10.1109/NEMS.2014.6908828",

language = "English",

series = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "366--369",

booktitle = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014",

address = "United States",

note = "9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014 ; Conference date: 13-04-2014 Through 16-04-2014",

}

Lu, CH & Wang, K 2014, Filling through-silicon vias with conductive ferromagnetic silver-iron composite. in 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014., 6908828, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Institute of Electrical and Electronics Engineers Inc., pp. 366-369, 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014, Waikiki Beach, United States, 14-04-13. https://doi.org/10.1109/NEMS.2014.6908828

Filling through-silicon vias with conductive ferromagnetic silver-iron composite. / Lu, Chung Han; Wang, Kerwin.

9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc., 2014. p. 366-369 6908828 (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Filling through-silicon vias with conductive ferromagnetic silver-iron composite

AU - Lu, Chung Han

AU - Wang, Kerwin

PY - 2014/9/23

Y1 - 2014/9/23

N2 - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.

AB - This paper demonstrates a novel magnetic induced injection method of ferromagnetic composite to build electrically conductive through-silicon vias (TSVs). The through conductive via is filled with conductive ferromagnetic composite by attractive magnetic force. The composite is made of the mixture of silver and iron nanoparticles. SU-8 2002 is covered on the side walls of via as an insulating material by a low vacuum suction. After thermal curing process, the dielectric layer can possess an electric field as high as 5×106 V/cm. All of the fabrication steps are completed below 100 C. The TSVs can allow a current density of 6×107 A/m2. The leakage current is 2×10-6 A at 50 V. After DC electrical sintering, the resistances of each TSV is less than 0.85 Ω.

UR - http://www.scopus.com/inward/record.url?scp=84908620207&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84908620207&partnerID=8YFLogxK

U2 - 10.1109/NEMS.2014.6908828

DO - 10.1109/NEMS.2014.6908828

M3 - Conference contribution

AN - SCOPUS:84908620207

T3 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

SP - 366

EP - 369

BT - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014

Y2 - 13 April 2014 through 16 April 2014

ER -

Lu CH, Wang K. Filling through-silicon vias with conductive ferromagnetic silver-iron composite. In 9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014. Institute of Electrical and Electronics Engineers Inc. 2014. p. 366-369. 6908828. (9th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, IEEE-NEMS 2014). https://doi.org/10.1109/NEMS.2014.6908828

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10.1109/NEMS.2014.6908828