Abstract
A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.
| Original language | English |
|---|---|
| Title of host publication | 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings |
| DOIs | |
| Publication status | Published - 2013 Dec 1 |
| Event | 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Xi'an, Shaanxi, China Duration: 2013 Oct 22 → 2013 Oct 25 |
Publication series
| Name | IEEE Region 10 Annual International Conference, Proceedings/TENCON |
|---|---|
| ISSN (Print) | 2159-3442 |
| ISSN (Electronic) | 2159-3450 |
Other
| Other | 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 |
|---|---|
| Country | China |
| City | Xi'an, Shaanxi |
| Period | 13-10-22 → 13-10-25 |
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All Science Journal Classification (ASJC) codes
- Computer Science Applications
- Electrical and Electronic Engineering
Cite this
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Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. / Ke, Shi Ching; Shen, Chih-Hsiung.
2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings. 2013. 6719033 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor
AU - Ke, Shi Ching
AU - Shen, Chih-Hsiung
PY - 2013/12/1
Y1 - 2013/12/1
N2 - A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.
AB - A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.
UR - http://www.scopus.com/inward/record.url?scp=84894290058&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84894290058&partnerID=8YFLogxK
U2 - 10.1109/TENCON.2013.6719033
DO - 10.1109/TENCON.2013.6719033
M3 - Conference contribution
AN - SCOPUS:84894290058
SN - 9781479928262
T3 - IEEE Region 10 Annual International Conference, Proceedings/TENCON
BT - 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings
ER -