Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor

Shi Ching Ke, Chih-Hsiung Shen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.

Original languageEnglish
Title of host publication2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Xi'an, Shaanxi, China
Duration: 2013 Oct 222013 Oct 25

Publication series

NameIEEE Region 10 Annual International Conference, Proceedings/TENCON
ISSN (Print)2159-3442
ISSN (Electronic)2159-3450

Other

Other2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013
CountryChina
CityXi'an, Shaanxi
Period13-10-2213-10-25

Fingerprint

Chemical sensors
MEMS
Electrodes
Sol-gels
Magnetic fields
Sampling
Heating
Microsensors
Networks (circuits)
Solenoids
Gases
Energy dissipation
Fabrication
Temperature

All Science Journal Classification (ASJC) codes

  • Computer Science Applications
  • Electrical and Electronic Engineering

Cite this

Ke, S. C., & Shen, C-H. (2013). Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. In 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings [6719033] (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2013.6719033
Ke, Shi Ching ; Shen, Chih-Hsiung. / Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings. 2013. (IEEE Region 10 Annual International Conference, Proceedings/TENCON).
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abstract = "A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492{\%}/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.",
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Ke, SC & Shen, C-H 2013, Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. in 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings., 6719033, IEEE Region 10 Annual International Conference, Proceedings/TENCON, 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013, Xi'an, Shaanxi, China, 13-10-22. https://doi.org/10.1109/TENCON.2013.6719033

Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. / Ke, Shi Ching; Shen, Chih-Hsiung.

2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings. 2013. 6719033 (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.

AB - A new magnetic-catalytic sensing mechanism to increase sensitivity for CMOS MEMS gas sensor with mesh stacked sensing electrodes is proposed. Beyond the conventional power dissipation of heating to maintain a certain working temperature, a novel gas sensor with magnetic-catalytic mechanism works at the ambient temperature without the consideration of active heating. The design and fabrication is realized by the standard 0.35μm CMOS process to fabricate a gas sensor with mesh stacked electrodes. For the preparation of magnetic sensing material, a prepared solution of sol-gel SnO2 is mixed at SnO 2 : Fe3O4 = 3:1, which was deposited onto mesh stacked electrodes. Moreover, to obtain a stable gas sensing signal, a pulse sampling scheme is proposed in this research work. Since the resistance of sensing material with sol-gel deposition shows a drift behavior under a DC bias circuit. We have proposed a new signal reading scheme with a pulse-type bias for a bridge sensing circuit. Only under the sampling phase, the sensing current flows through the sensing material which induces a voltage drop across the resistance. For the CO concentration measurement, the sample is tested and verified inside a CO gas chamber with a magnetic field generator of solenoid coil. A careful investigation of measurement results, at horizontal magnetic field, the sensitivity of proposed CO gas sensor reaches 0.492%/ppm under the 12.12 Gauss which shows widely applicable for an ultra-low power chemical microsensor with high sensitivity.

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Ke SC, Shen C-H. Fe3O4 magnetic enhanced CMOS MEMS compatible gas sensor. In 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings. 2013. 6719033. (IEEE Region 10 Annual International Conference, Proceedings/TENCON). https://doi.org/10.1109/TENCON.2013.6719033