Abstract
Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
Original language | English |
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Pages | 444-446 |
Number of pages | 3 |
Publication status | Published - 1995 Dec 1 |
Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 1995 Oct 24 → 1995 Oct 28 |
Other
Other | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
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City | Beijing, China |
Period | 95-10-24 → 95-10-28 |
All Science Journal Classification (ASJC) codes
- Engineering(all)