Abstract
Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
| Original language | English |
|---|---|
| Pages | 444-446 |
| Number of pages | 3 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 1995 Oct 24 → 1995 Oct 28 |
Other
| Other | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 95-10-24 → 95-10-28 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. / Deng, C.; Wu, Jong-Ching; Rack, J.; Sigmon, T. W.; Wybourne, M. N.
1995. 444-446 Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .Research output: Contribution to conference › Paper
TY - CONF
T1 - Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy
AU - Deng, C.
AU - Wu, Jong-Ching
AU - Rack, J.
AU - Sigmon, T. W.
AU - Wybourne, M. N.
PY - 1995/12/1
Y1 - 1995/12/1
N2 - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
AB - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
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M3 - Paper
AN - SCOPUS:0029453987
SP - 444
EP - 446
ER -