Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
|Number of pages||3|
|Publication status||Published - 1995 Dec 1|
|Event||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China|
Duration: 1995 Oct 24 → 1995 Oct 28
|Other||Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology|
|Period||95-10-24 → 95-10-28|
All Science Journal Classification (ASJC) codes