Abstract
Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.
| Original language | English |
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| Pages | 444-446 |
| Number of pages | 3 |
| Publication status | Published - 1995 Dec 1 |
| Event | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 1995 Oct 24 → 1995 Oct 28 |
Other
| Other | Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology |
|---|---|
| City | Beijing, China |
| Period | 95-10-24 → 95-10-28 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
Deng, C., Wu, J-C., Rack, J., Sigmon, T. W., & Wybourne, M. N. (1995). Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. 444-446. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .