Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

C. Deng, Jong-Ching Wu, J. Rack, T. W. Sigmon, M. N. Wybourne

Research output: Contribution to conferencePaper

Abstract

Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

Original languageEnglish
Pages444-446
Number of pages3
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 1995 Oct 241995 Oct 28

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period95-10-2495-10-28

Fingerprint

Pulsed lasers
Epitaxial growth
Wire
Fabrication
Semiconductor quantum wires
Bipolar transistors
Auger electron spectroscopy
Microscopes
Electron microscopes
Transmission electron microscopy
Silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Deng, C., Wu, J-C., Rack, J., Sigmon, T. W., & Wybourne, M. N. (1995). Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. 444-446. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .
Deng, C. ; Wu, Jong-Ching ; Rack, J. ; Sigmon, T. W. ; Wybourne, M. N. / Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .3 p.
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abstract = "Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.",
author = "C. Deng and Jong-Ching Wu and J. Rack and Sigmon, {T. W.} and Wybourne, {M. N.}",
year = "1995",
month = "12",
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language = "English",
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note = "Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 24-10-1995 Through 28-10-1995",

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Deng, C, Wu, J-C, Rack, J, Sigmon, TW & Wybourne, MN 1995, 'Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy', Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, 95-10-24 - 95-10-28 pp. 444-446.

Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. / Deng, C.; Wu, Jong-Ching; Rack, J.; Sigmon, T. W.; Wybourne, M. N.

1995. 444-446 Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .

Research output: Contribution to conferencePaper

TY - CONF

T1 - Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

AU - Deng, C.

AU - Wu, Jong-Ching

AU - Rack, J.

AU - Sigmon, T. W.

AU - Wybourne, M. N.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

AB - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

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Deng C, Wu J-C, Rack J, Sigmon TW, Wybourne MN. Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. 1995. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .