Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

C. Deng, Jong-Ching Wu, J. Rack, T. W. Sigmon, M. N. Wybourne

Research output: Contribution to conferencePaper

Abstract

Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

Original languageEnglish
Pages444-446
Number of pages3
Publication statusPublished - 1995 Dec 1
EventProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China
Duration: 1995 Oct 241995 Oct 28

Other

OtherProceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
CityBeijing, China
Period95-10-2495-10-28

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Deng, C., Wu, J-C., Rack, J., Sigmon, T. W., & Wybourne, M. N. (1995). Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy. 444-446. Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .