Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

C. Deng; Jong-Ching Wu; J. Rack; T. W. Sigmon; M. N. Wybourne

Fabrication of ultra-small dimension Si_1-xGe_x wires in Si using pulsed laser induced epitaxy

C. Deng, Jong-Ching Wu, J. Rack, T. W. Sigmon, M. N. Wybourne

Department of Physics

Research output: Contribution to conference › Paper › peer-review

Abstract

Direct writing of sub-micron Si_1-xGe_x wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si_1-xGe_x bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

Original language	English
Pages	444-446
Number of pages	3
Publication status	Published - 1995 Dec 1
Event	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology - Beijing, China Duration: 1995 Oct 24 → 1995 Oct 28

Other

Other	Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology
City	Beijing, China
Period	95-10-24 → 95-10-28

All Science Journal Classification (ASJC) codes

Engineering(all)

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@conference{2358157ec9074770868bc6ae6625a2af,

title = "Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy",

abstract = "Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.",

author = "C. Deng and Jong-Ching Wu and J. Rack and Sigmon, {T. W.} and Wybourne, {M. N.}",

year = "1995",

month = dec,

day = "1",

language = "English",

pages = "444--446",

note = "Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology ; Conference date: 24-10-1995 Through 28-10-1995",

}

Fabrication of ultra-small dimension Si_1-xGe_x wires in Si using pulsed laser induced epitaxy. / Deng, C.; Wu, Jong-Ching; Rack, J.; Sigmon, T. W.; Wybourne, M. N.

1995. 444-446 Paper presented at Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology, Beijing, China, .

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Fabrication of ultra-small dimension Si1-xGex wires in Si using pulsed laser induced epitaxy

AU - Deng, C.

AU - Wu, Jong-Ching

AU - Rack, J.

AU - Sigmon, T. W.

AU - Wybourne, M. N.

PY - 1995/12/1

Y1 - 1995/12/1

N2 - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

AB - Direct writing of sub-micron Si1-xGex wires in Si is demonstrated for the first time using Pulsed Laser Induced Epitaxy (PLIE) and a photolithographic lift-off technique. The wire structures are analyzed by Secondary Electron Microscope (SEM), Atomic Force Microscope (AFM), Auger Electron Spectroscopy (AES), and cross-sectional Transmission Electron Microscopy (TEM). Side diffusion effects observed for the Ge are discussed. Potential applications of the wire structure include base formation in a lateral Si1-xGex bipolar transistor and direct formation of SiGe/Si quantum wire structures in a silicon chip.

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M3 - Paper

AN - SCOPUS:0029453987

SP - 444

EP - 446

T2 - Proceedings of the 1995 4th International Conference on Solid-State and Integrated Circuit Technology

Y2 - 24 October 1995 through 28 October 1995

ER -