Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages276-277
Number of pages2
Publication statusPublished - 2004 Dec 1
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 2004 Oct 262004 Oct 29

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period04-10-2604-10-29

Fingerprint

Plasma etching
Nanotips
Germanium
Nanowires
Nanostructures
Vapors
Fabrication
Silicon
Hydrogen
Liquids
Aspect ratio
Masks
Etching

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Yang, M. C., Shieh, J., Ko, T. S., Chen, H. L., & Chu, T. C. (2004). Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 276-277)
Yang, Ming Che ; Shieh, Jiann ; Ko, Tsung Shine ; Chen, Hsuen Li ; Chu, Tieh Chi. / Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. pp. 276-277
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Yang, MC, Shieh, J, Ko, TS, Chen, HL & Chu, TC 2004, Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. in Digest of Papers - Microprocesses and Nanotechnology 2004. pp. 276-277, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 04-10-26.

Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.

Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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T1 - Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

AU - Yang, Ming Che

AU - Shieh, Jiann

AU - Ko, Tsung Shine

AU - Chen, Hsuen Li

AU - Chu, Tieh Chi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

AB - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

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Yang MC, Shieh J, Ko TS, Chen HL, Chu TC. Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. In Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277