Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages276-277
Number of pages2
Publication statusPublished - 2004 Dec 1
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: 2004 Oct 262004 Oct 29

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period04-10-2604-10-29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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