Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

Ming Che Yang; Jiann Shieh; Tsung Shine Ko; Hsuen Li Chen; Tieh Chi Chu

Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

Original language	English
Title of host publication	Digest of Papers - Microprocesses and Nanotechnology 2004
Pages	276-277
Number of pages	2
Publication status	Published - 2004 Dec 1
Event	2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: 2004 Oct 26 → 2004 Oct 29

Publication series

Name	Digest of Papers - Microprocesses and Nanotechnology 2004

Other

Other	2004 International Microprocesses and Nanotechnology Conference
Country	Japan
City	Osaka
Period	04-10-26 → 04-10-29

All Science Journal Classification (ASJC) codes

Engineering(all)

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@inproceedings{f67ff65a6ad940d79686c679efa057c4,

title = "Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism",

abstract = "Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.",

author = "Yang, {Ming Che} and Jiann Shieh and Ko, {Tsung Shine} and Chen, {Hsuen Li} and Chu, {Tieh Chi}",

year = "2004",

month = dec,

day = "1",

language = "English",

isbn = "4990247205",

series = "Digest of Papers - Microprocesses and Nanotechnology 2004",

pages = "276--277",

booktitle = "Digest of Papers - Microprocesses and Nanotechnology 2004",

note = "2004 International Microprocesses and Nanotechnology Conference ; Conference date: 26-10-2004 Through 29-10-2004",

}

Yang, MC, Shieh, J, Ko, TS, Chen, HL & Chu, TC 2004, Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. in Digest of Papers - Microprocesses and Nanotechnology 2004. Digest of Papers - Microprocesses and Nanotechnology 2004, pp. 276-277, 2004 International Microprocesses and Nanotechnology Conference, Osaka, Japan, 04-10-26.

Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.

Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277 (Digest of Papers - Microprocesses and Nanotechnology 2004).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism

AU - Yang, Ming Che

AU - Shieh, Jiann

AU - Ko, Tsung Shine

AU - Chen, Hsuen Li

AU - Chu, Tieh Chi

PY - 2004/12/1

Y1 - 2004/12/1

N2 - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

AB - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.

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M3 - Conference contribution

AN - SCOPUS:23244449694

SN - 4990247205

T3 - Digest of Papers - Microprocesses and Nanotechnology 2004

SP - 276

EP - 277

BT - Digest of Papers - Microprocesses and Nanotechnology 2004

T2 - 2004 International Microprocesses and Nanotechnology Conference

Y2 - 26 October 2004 through 29 October 2004

ER -