Abstract
Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.
| Original language | English |
|---|---|
| Title of host publication | Digest of Papers - Microprocesses and Nanotechnology 2004 |
| Pages | 276-277 |
| Number of pages | 2 |
| Publication status | Published - 2004 Dec 1 |
| Event | 2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan Duration: 2004 Oct 26 → 2004 Oct 29 |
Other
| Other | 2004 International Microprocesses and Nanotechnology Conference |
|---|---|
| Country | Japan |
| City | Osaka |
| Period | 04-10-26 → 04-10-29 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
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Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.
Digest of Papers - Microprocesses and Nanotechnology 2004. 2004. p. 276-277.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism
AU - Yang, Ming Che
AU - Shieh, Jiann
AU - Ko, Tsung Shine
AU - Chen, Hsuen Li
AU - Chu, Tieh Chi
PY - 2004/12/1
Y1 - 2004/12/1
N2 - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.
AB - Aligned silicon nanowires and germanium nanostructures were fabricated by combination of hydrogen plasma dry etching and vapor-liquid-solid (VLS) growth mechanism. The morphology of nanowires was transferred into nanotips beyond 10 min plasma etching since Au hard mask reduced with etching time. It was shown that the aspect ratio of silicon nanotips can reach as high as 30. The intensity of Ge (311) peak increased and the one of Si peak decreased as the grazing angles decreased from 3° to 1°, which indicates that Ge nanostructure exists on top of the Si nanowire.
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M3 - Conference contribution
SN - 4990247205
SP - 276
EP - 277
BT - Digest of Papers - Microprocesses and Nanotechnology 2004
ER -