Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism

Ming Che Yang; Jiann Shieh; Tsung Shine Ko; Hsuen Li Chen; Tieh Chi Chu

doi:10.1143/JJAP.44.5791

Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

Department of Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF₄, SF ₆, and SiCl₄ gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.

Original language	English
Pages (from-to)	5791-5794
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	44
Issue number	7 B
DOIs	https://doi.org/10.1143/JJAP.44.5791
Publication status	Published - 2005 Jul 26

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism",

abstract = "Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.",

author = "Yang, {Ming Che} and Jiann Shieh and Ko, {Tsung Shine} and Chen, {Hsuen Li} and Chu, {Tieh Chi}",

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Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 B, 26.07.2005, p. 5791-5794.

Research output: Contribution to journal › Article › peer-review

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AU - Chu, Tieh Chi

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