Abstract
Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 5791-5794 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 44 |
| Issue number | 7 B |
| DOIs | |
| Publication status | Published - 2005 Jul 26 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 B, 26.07.2005, p. 5791-5794.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism
AU - Yang, Ming Che
AU - Shieh, Jiann
AU - Ko, Tsung Shine
AU - Chen, Hsuen Li
AU - Chu, Tieh Chi
PY - 2005/7/26
Y1 - 2005/7/26
N2 - Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.
AB - Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.
UR - http://www.scopus.com/inward/record.url?scp=31844432587&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=31844432587&partnerID=8YFLogxK
U2 - 10.1143/JJAP.44.5791
DO - 10.1143/JJAP.44.5791
M3 - Article
AN - SCOPUS:31844432587
VL - 44
SP - 5791
EP - 5794
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 7 B
ER -