Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism

Ming Che Yang, Jiann Shieh, Tsung Shine Ko, Hsuen Li Chen, Tieh Chi Chu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.

Original languageEnglish
Pages (from-to)5791-5794
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume44
Issue number7 B
DOIs
Publication statusPublished - 2005 Jul 26

Fingerprint

Plasma etching
hydrogen plasma
Germanium
Dry etching
Nanostructures
germanium
Vapors
etching
vapors
Fabrication
Silicon
Hydrogen
fabrication
Liquids
silicon
liquids
Nanowires
Plasmas
nanowires
Reactive ion etching

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "Silicon and germanium nanostructures were fabricated by the combination of dry etching and vapor-liquid-solid (VLS) mechanism. Gold nanoparticles, about 20 nm in diameter, captured by self-assemble monolayer were adopted as the hard mask for dry etching and catalyst of germanium growth. Reactive ion etching in an inductive coupled plasma chemical vapor deposition (ICPCVD) system was used to fabricate various silicon nanostructures. Instead of CF4, SF 6, and SiCl4 gases, hydrogen plasma was used alone as the etching species to construct high-aspect-ratio silicon nanowires. Germanium nanostructures were then fabricated on the surface of silicon nanowires by dry etching and VLS mechanism.",
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Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS mechanism. / Yang, Ming Che; Shieh, Jiann; Ko, Tsung Shine; Chen, Hsuen Li; Chu, Tieh Chi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 44, No. 7 B, 26.07.2005, p. 5791-5794.

Research output: Contribution to journalArticle

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AU - Chu, Tieh Chi

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