Fabrication of perpendicular MgO-based magnetic tunnel junctions with TbFe/FeCo electrodes

Lin Xiu Ye, Ching Ming Lee, Jia Mou Lee, Jia Hua Lin, Jin Zhen Liu, Jong Ching Wu, Te Ho Wu

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Abstract

This paper reports the results obtained using TbFe and FeCo alloys as the electrodes of MgO-based perpendicular magnetic tunnel junctions (pMTJs). Without annealing treatment, the as-deposited structure showed MgO (001) crystalline texture. The tunnel magnetoresistance (TMR) ratio measured from the patterned cell of size 3 × 6 μ m2 was 9.5% at room temperature. However, the coercivities of both free and fixed layers were reduced considerably due to the damage caused from the patterning process. The hysteresis loop measurements showed that the magnetic properties of the structures can still be maintained after annealing up to 350 °C.

Original languageEnglish
Article number6028219
Pages (from-to)3857-3859
Number of pages3
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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