Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs

Jun Rong Chen, Tsung Shine Ko, Tien Chang Lu, Yi An Chang, Hao Chung Kuo, Yen Kuang Kuo, Jui Yen Tsai, Li Wen Laih, Shing Chung Wang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.

Original languageEnglish
Pages (from-to)1891-1900
Number of pages10
JournalJournal of Lightwave Technology
Volume26
Issue number13
DOIs
Publication statusPublished - 2008 Sep 25

Fingerprint

cavity resonators
light emitting diodes
fabrication
cavities
temperature
wavelengths
leakage
simulation
quantum wells
output
electrons

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, Jun Rong ; Ko, Tsung Shine ; Lu, Tien Chang ; Chang, Yi An ; Kuo, Hao Chung ; Kuo, Yen Kuang ; Tsai, Jui Yen ; Laih, Li Wen ; Wang, Shing Chung. / Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs. In: Journal of Lightwave Technology. 2008 ; Vol. 26, No. 13. pp. 1891-1900.
@article{e96f31d3403245c4a7b31c888f180004,
title = "Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs",
abstract = "InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.",
author = "Chen, {Jun Rong} and Ko, {Tsung Shine} and Lu, {Tien Chang} and Chang, {Yi An} and Kuo, {Hao Chung} and Kuo, {Yen Kuang} and Tsai, {Jui Yen} and Laih, {Li Wen} and Wang, {Shing Chung}",
year = "2008",
month = "9",
day = "25",
doi = "10.1109/JLT.2008.920639",
language = "English",
volume = "26",
pages = "1891--1900",
journal = "Journal of Lightwave Technology",
issn = "0733-8724",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "13",

}

Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs. / Chen, Jun Rong; Ko, Tsung Shine; Lu, Tien Chang; Chang, Yi An; Kuo, Hao Chung; Kuo, Yen Kuang; Tsai, Jui Yen; Laih, Li Wen; Wang, Shing Chung.

In: Journal of Lightwave Technology, Vol. 26, No. 13, 25.09.2008, p. 1891-1900.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs

AU - Chen, Jun Rong

AU - Ko, Tsung Shine

AU - Lu, Tien Chang

AU - Chang, Yi An

AU - Kuo, Hao Chung

AU - Kuo, Yen Kuang

AU - Tsai, Jui Yen

AU - Laih, Li Wen

AU - Wang, Shing Chung

PY - 2008/9/25

Y1 - 2008/9/25

N2 - InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.

AB - InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.

UR - http://www.scopus.com/inward/record.url?scp=52149117171&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=52149117171&partnerID=8YFLogxK

U2 - 10.1109/JLT.2008.920639

DO - 10.1109/JLT.2008.920639

M3 - Article

AN - SCOPUS:52149117171

VL - 26

SP - 1891

EP - 1900

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

SN - 0733-8724

IS - 13

ER -