Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs

Jun Rong Chen, Tsung Shine Ko, Tien Chang Lu, Yi An Chang, Hao Chung Kuo, Yen Kuang Kuo, Jui Yen Tsai, Li Wen Laih, Shing Chung Wang

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Abstract

InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.

Original languageEnglish
Pages (from-to)1891-1900
Number of pages10
JournalJournal of Lightwave Technology
Volume26
Issue number13
DOIs
Publication statusPublished - 2008 Sep 25

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chen, J. R., Ko, T. S., Lu, T. C., Chang, Y. A., Kuo, H. C., Kuo, Y. K., Tsai, J. Y., Laih, L. W., & Wang, S. C. (2008). Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs. Journal of Lightwave Technology, 26(13), 1891-1900. https://doi.org/10.1109/JLT.2008.920639