Abstract
InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.
| Original language | English |
|---|---|
| Pages (from-to) | 1891-1900 |
| Number of pages | 10 |
| Journal | Journal of Lightwave Technology |
| Volume | 26 |
| Issue number | 13 |
| DOIs | |
| Publication status | Published - 2008 Sep 25 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
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Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs. / Chen, Jun Rong; Ko, Tsung Shine; Lu, Tien Chang; Chang, Yi An; Kuo, Hao Chung; Kuo, Yen Kuang; Tsai, Jui Yen; Laih, Li Wen; Wang, Shing Chung.
In: Journal of Lightwave Technology, Vol. 26, No. 13, 25.09.2008, p. 1891-1900.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and characterization of temperature insensitive 660-nm resonant-cavity LEDs
AU - Chen, Jun Rong
AU - Ko, Tsung Shine
AU - Lu, Tien Chang
AU - Chang, Yi An
AU - Kuo, Hao Chung
AU - Kuo, Yen Kuang
AU - Tsai, Jui Yen
AU - Laih, Li Wen
AU - Wang, Shing Chung
PY - 2008/9/25
Y1 - 2008/9/25
N2 - InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.
AB - InGaP/AlGaInP 660-nm resonant-cavity light-emitting diodes (RCLEDs) with stable temperature characteristics have been achieved by extending the resonant cavity length from one optical wavelength (1λ) to three optical wavelengths (3\lambda) and tripling the number of quantum wells. When the operation temperature increases from 25 °C to 95°C, the degree of power variation at 20 mA is reduced from -2.1 dB to -0.6 dB for the conventional 1-λ cavity RCLEDs and 3-λ cavity RCLEDs, respectively. In order to interpret the temperature-dependent experimental results, advanced device simulation is applied to model the RCLEDs with different cavity designs. According to the numerical simulation results, we deduce that the stable temperature-dependent output performance should originate from the reduction of electron leakage current and thermally enhanced hole transport for the 3-λ cavity AlGaInP RCLEDs.
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U2 - 10.1109/JLT.2008.920639
DO - 10.1109/JLT.2008.920639
M3 - Article
AN - SCOPUS:52149117171
VL - 26
SP - 1891
EP - 1900
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 13
ER -