Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes

Yi An Chang, Fang Ming Chen, Yu Lin Tsai, Ching Wen Chang, Kuo Ju Chen, Shan Rong Li, Tien Chang Lu, Hao Chung Kuo, Yen Kuang Kuo, Peichen Yu, Chien Chung Lin, Li Wei Tu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.

Original languageEnglish
Pages (from-to)A1334-A1342
JournalOptics Express
Volume22
Issue numberSUPPL. 5
DOIs
Publication statusPublished - 2014 Aug 25

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Bragg reflectors
solar cells
etching
mirrors
fabrication
air masses
short circuit currents
open circuit voltage
illumination
current density
optimization
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chang, Y. A., Chen, F. M., Tsai, Y. L., Chang, C. W., Chen, K. J., Li, S. R., ... Tu, L. W. (2014). Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. Optics Express, 22(SUPPL. 5), A1334-A1342. https://doi.org/10.1364/OE.22.0A1334
Chang, Yi An ; Chen, Fang Ming ; Tsai, Yu Lin ; Chang, Ching Wen ; Chen, Kuo Ju ; Li, Shan Rong ; Lu, Tien Chang ; Kuo, Hao Chung ; Kuo, Yen Kuang ; Yu, Peichen ; Lin, Chien Chung ; Tu, Li Wei. / Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. In: Optics Express. 2014 ; Vol. 22, No. SUPPL. 5. pp. A1334-A1342.
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abstract = "In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5{\%}, leading to a conversion efficiency of 1.69{\%} from 0.66{\%} of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10{\%} from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.",
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Chang, YA, Chen, FM, Tsai, YL, Chang, CW, Chen, KJ, Li, SR, Lu, TC, Kuo, HC, Kuo, YK, Yu, P, Lin, CC & Tu, LW 2014, 'Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes', Optics Express, vol. 22, no. SUPPL. 5, pp. A1334-A1342. https://doi.org/10.1364/OE.22.0A1334

Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. / Chang, Yi An; Chen, Fang Ming; Tsai, Yu Lin; Chang, Ching Wen; Chen, Kuo Ju; Li, Shan Rong; Lu, Tien Chang; Kuo, Hao Chung; Kuo, Yen Kuang; Yu, Peichen; Lin, Chien Chung; Tu, Li Wei.

In: Optics Express, Vol. 22, No. SUPPL. 5, 25.08.2014, p. A1334-A1342.

Research output: Contribution to journalArticle

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T1 - Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes

AU - Chang, Yi An

AU - Chen, Fang Ming

AU - Tsai, Yu Lin

AU - Chang, Ching Wen

AU - Chen, Kuo Ju

AU - Li, Shan Rong

AU - Lu, Tien Chang

AU - Kuo, Hao Chung

AU - Kuo, Yen Kuang

AU - Yu, Peichen

AU - Lin, Chien Chung

AU - Tu, Li Wei

PY - 2014/8/25

Y1 - 2014/8/25

N2 - In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.

AB - In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.

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