Abstract
In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.
| Original language | English |
|---|---|
| Pages (from-to) | A1334-A1342 |
| Journal | Optics Express |
| Volume | 22 |
| Issue number | SUPPL. 5 |
| DOIs | |
| Publication status | Published - 2014 Aug 25 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
Cite this
}
Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. / Chang, Yi An; Chen, Fang Ming; Tsai, Yu Lin; Chang, Ching Wen; Chen, Kuo Ju; Li, Shan Rong; Lu, Tien Chang; Kuo, Hao Chung; Kuo, Yen Kuang; Yu, Peichen; Lin, Chien Chung; Tu, Li Wei.
In: Optics Express, Vol. 22, No. SUPPL. 5, 25.08.2014, p. A1334-A1342.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes
AU - Chang, Yi An
AU - Chen, Fang Ming
AU - Tsai, Yu Lin
AU - Chang, Ching Wen
AU - Chen, Kuo Ju
AU - Li, Shan Rong
AU - Lu, Tien Chang
AU - Kuo, Hao Chung
AU - Kuo, Yen Kuang
AU - Yu, Peichen
AU - Lin, Chien Chung
AU - Tu, Li Wei
PY - 2014/8/25
Y1 - 2014/8/25
N2 - In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.
AB - In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.
UR - http://www.scopus.com/inward/record.url?scp=84906715884&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84906715884&partnerID=8YFLogxK
U2 - 10.1364/OE.22.0A1334
DO - 10.1364/OE.22.0A1334
M3 - Article
AN - SCOPUS:84906715884
VL - 22
SP - A1334-A1342
JO - Optics Express
JF - Optics Express
SN - 1094-4087
IS - SUPPL. 5
ER -