Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes

Yi An Chang, Fang Ming Chen, Yu Lin Tsai, Ching Wen Chang, Kuo Ju Chen, Shan Rong Li, Tien Chang Lu, Hao Chung Kuo, Yen Kuang Kuo, Peichen Yu, Chien Chung Lin, Li Wei Tu

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Abstract

In this study, the design and fabrication schemes of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes are presented. Compared to typical front-side illuminated solar cells, the improvements of open-circuit voltage (Voc) from 1.88 to 1.94 V and short-circuit current density (Jsc) from 0.84 to 1.02 mA/cm2 are observed. Most significantly, the back-side illuminated InGaN/GaN solar cells exhibit an extremely high fill factor up to 85.5%, leading to a conversion efficiency of 1.69% from 0.66% of typical frontside illuminated solar cells under air mass 1.5 global illuminations. Moreover, the effects of bottom Bragg mirrors on the photovoltaic characteristics of back-side illuminated solar cells are studied by an advanced simulation program. The results show that the Jsc could further be improved with a factor of 10% from the original back-side illuminated solar cell by the structure optimization of bottom Bragg mirrors.

Original languageEnglish
Pages (from-to)A1334-A1342
JournalOptics Express
Volume22
Issue numberSUPPL. 5
DOIs
Publication statusPublished - 2014 Aug 25

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

Chang, Y. A., Chen, F. M., Tsai, Y. L., Chang, C. W., Chen, K. J., Li, S. R., Lu, T. C., Kuo, H. C., Kuo, Y. K., Yu, P., Lin, C. C., & Tu, L. W. (2014). Fabrication and characterization of back-side illuminated InGaN/GaN solar cells with periodic via-holes etching and Bragg mirror processes. Optics Express, 22(SUPPL. 5), A1334-A1342. https://doi.org/10.1364/OE.22.0A1334