Abstract
A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.
Original language | English |
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Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2006 |
Publisher | Optical Society of America |
ISBN (Print) | 1557528136, 9781557528131 |
Publication status | Published - 2006 Jan 1 |
Event | Quantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States Duration: 2006 May 21 → 2006 May 21 |
Other
Other | Quantum Electronics and Laser Science Conference, QELS 2006 |
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Country | United States |
City | Long Beach, CA |
Period | 06-05-21 → 06-05-21 |
All Science Journal Classification (ASJC) codes
- Instrumentation
- Atomic and Molecular Physics, and Optics