Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

Yi An Chang, Sheng Horng Yen, Tsung-Shine Ko, Te Chung Wang, Chun Yi Lu, Hao Chung Kuo, Yen-Kuang Kuo, Tien Chang Lu, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
Publication statusPublished - 2006 Jan 1
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 21

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-21

Fingerprint

Light emitting diodes
light emitting diodes
Electrons
Chemical analysis
electrons
simulation

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Cite this

Chang, Y. A., Yen, S. H., Ko, T-S., Wang, T. C., Lu, C. Y., Kuo, H. C., ... Wang, S. C. (2006). Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. In Quantum Electronics and Laser Science Conference, QELS 2006 Optical Society of America.
Chang, Yi An ; Yen, Sheng Horng ; Ko, Tsung-Shine ; Wang, Te Chung ; Lu, Chun Yi ; Kuo, Hao Chung ; Kuo, Yen-Kuang ; Lu, Tien Chang ; Wang, Shing Chung. / Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. Quantum Electronics and Laser Science Conference, QELS 2006. Optical Society of America, 2006.
@inproceedings{2067f9e3bbbf456ba22d8509aea9d59a,
title = "Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes",
abstract = "A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21{\%}.",
author = "Chang, {Yi An} and Yen, {Sheng Horng} and Tsung-Shine Ko and Wang, {Te Chung} and Lu, {Chun Yi} and Kuo, {Hao Chung} and Yen-Kuang Kuo and Lu, {Tien Chang} and Wang, {Shing Chung}",
year = "2006",
month = "1",
day = "1",
language = "English",
isbn = "1557528136",
booktitle = "Quantum Electronics and Laser Science Conference, QELS 2006",
publisher = "Optical Society of America",

}

Chang, YA, Yen, SH, Ko, T-S, Wang, TC, Lu, CY, Kuo, HC, Kuo, Y-K, Lu, TC & Wang, SC 2006, Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. in Quantum Electronics and Laser Science Conference, QELS 2006. Optical Society of America, Quantum Electronics and Laser Science Conference, QELS 2006, Long Beach, CA, United States, 06-05-21.

Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. / Chang, Yi An; Yen, Sheng Horng; Ko, Tsung-Shine; Wang, Te Chung; Lu, Chun Yi; Kuo, Hao Chung; Kuo, Yen-Kuang; Lu, Tien Chang; Wang, Shing Chung.

Quantum Electronics and Laser Science Conference, QELS 2006. Optical Society of America, 2006.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

AU - Chang, Yi An

AU - Yen, Sheng Horng

AU - Ko, Tsung-Shine

AU - Wang, Te Chung

AU - Lu, Chun Yi

AU - Kuo, Hao Chung

AU - Kuo, Yen-Kuang

AU - Lu, Tien Chang

AU - Wang, Shing Chung

PY - 2006/1/1

Y1 - 2006/1/1

N2 - A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

AB - A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

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M3 - Conference contribution

AN - SCOPUS:84899140603

SN - 1557528136

SN - 9781557528131

BT - Quantum Electronics and Laser Science Conference, QELS 2006

PB - Optical Society of America

ER -

Chang YA, Yen SH, Ko T-S, Wang TC, Lu CY, Kuo HC et al. Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. In Quantum Electronics and Laser Science Conference, QELS 2006. Optical Society of America. 2006