Abstract
A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.
| Original language | English |
|---|---|
| Title of host publication | Quantum Electronics and Laser Science Conference, QELS 2006 |
| Publisher | Optical Society of America |
| ISBN (Print) | 1557528136, 9781557528131 |
| Publication status | Published - 2006 Jan 1 |
| Event | Quantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States Duration: 2006 May 21 → 2006 May 21 |
Other
| Other | Quantum Electronics and Laser Science Conference, QELS 2006 |
|---|---|
| Country | United States |
| City | Long Beach, CA |
| Period | 06-05-21 → 06-05-21 |
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All Science Journal Classification (ASJC) codes
- Instrumentation
- Atomic and Molecular Physics, and Optics
Cite this
Chang, Y. A., Yen, S. H., Ko, T-S., Wang, T. C., Lu, C. Y., Kuo, H. C., ... Wang, S. C. (2006). Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. In Quantum Electronics and Laser Science Conference, QELS 2006 Optical Society of America.