Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

Yi An Chang, Sheng Horng Yen, Tsung-Shine Ko, Te Chung Wang, Chun Yi Lu, Hao Chung Kuo, Yen-Kuang Kuo, Tien Chang Lu, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

Original languageEnglish
Title of host publicationQuantum Electronics and Laser Science Conference, QELS 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
Publication statusPublished - 2006 Jan 1
EventQuantum Electronics and Laser Science Conference, QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 21

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-21

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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    Chang, Y. A., Yen, S. H., Ko, T-S., Wang, T. C., Lu, C. Y., Kuo, H. C., Kuo, Y-K., Lu, T. C., & Wang, S. C. (2006). Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. In Quantum Electronics and Laser Science Conference, QELS 2006 Optical Society of America.