Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes

Yi An Chang, Sheng Horng Yen, Tsung Hsine Ko, Te Chung Wang, Chun Yi Lu, Hao Chung Kuo, Yen Kuang Kuo, Tien Chang Lu, Shing Chung Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A 370-nm LED with an AlGaN electron-block layer is fabricated. Simulation results suggest that optimal performance is obtained when the LED has more than 3 wells and the AlGaN has Al composition of 19-21%.

Original languageEnglish
Title of host publicationConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
DOIs
Publication statusPublished - 2006 Dec 1
EventConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 - Long Beach, CA, United States
Duration: 2006 May 212006 May 26

Publication series

NameConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006

Other

OtherConference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006
CountryUnited States
CityLong Beach, CA
Period06-05-2106-05-26

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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    Chang, Y. A., Yen, S. H., Ko, T. H., Wang, T. C., Lu, C. Y., Kuo, H. C., Kuo, Y. K., Lu, T. C., & Wang, S. C. (2006). Experimental and theoretical analysis on ultraviolet 370-nm AlGaInN light-emitting diodes. In Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006 [4628798] (Conference on Lasers and Electro-Optics and 2006 Quantum Electronics and Laser Science Conference, CLEO/QELS 2006). https://doi.org/10.1109/CLEO.2006.4628798