Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

Yi An Chang, Sheng Horng Yen, Te Chung Wang, Hao Chung Kuo, Yen-Kuang Kuo, Tien Chang Lu, Shing Chung Wang

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21% and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.

Original languageEnglish
Pages (from-to)598-603
Number of pages6
JournalSemiconductor Science and Technology
Volume21
Issue number5
DOIs
Publication statusPublished - 2006 May 1

Fingerprint

ultraviolet radiation
Light emitting diodes
light emitting diodes
Semiconductor quantum wells
Electrons
output
quantum wells
electrons
Chemical analysis
Leakage currents
continuous radiation
leakage
optimization
Ultraviolet Rays
Electric potential
electric potential
room temperature
Temperature
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Chang, Yi An ; Yen, Sheng Horng ; Wang, Te Chung ; Kuo, Hao Chung ; Kuo, Yen-Kuang ; Lu, Tien Chang ; Wang, Shing Chung. / Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes. In: Semiconductor Science and Technology. 2006 ; Vol. 21, No. 5. pp. 598-603.
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abstract = "An ultraviolet (UV) AlGaInN light-emitting diode (LED) with 370 nm emission is demonstrated. At room temperature (RT) UV power of 0.8 mW at 20 mA with 3.6 V operation voltage is achieved. It provides 4 mW output when driven at 125 mA under continuous-wave (CW) operation. Qualitative optimization of the Al composition in the AlGaN electron-block layer and the quaternary AlGaInN quantum well (QW) number of the UV LED is also investigated in this study. The numerical results fit with the experimentally demonstrated output performance of our AlGaInN UV LED. We find that the UV AlGaInN LED can provide better output characteristics when the Al composition in the AlGaN electron-block layer is in the range 19-21{\%} and the AlGaInN QW number is in the range 5-7 by reducing the electron leakage current.",
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Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes. / Chang, Yi An; Yen, Sheng Horng; Wang, Te Chung; Kuo, Hao Chung; Kuo, Yen-Kuang; Lu, Tien Chang; Wang, Shing Chung.

In: Semiconductor Science and Technology, Vol. 21, No. 5, 01.05.2006, p. 598-603.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Experimental and theoretical analysis on ultraviolet 370 nm AlGaInN light-emitting diodes

AU - Chang, Yi An

AU - Yen, Sheng Horng

AU - Wang, Te Chung

AU - Kuo, Hao Chung

AU - Kuo, Yen-Kuang

AU - Lu, Tien Chang

AU - Wang, Shing Chung

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