Abstract
AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.
| Original language | English |
|---|---|
| Pages (from-to) | 595-602 |
| Number of pages | 8 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4078 |
| Publication status | Published - 2000 Jan 1 |
| Event | Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 2000 Jul 26 → 2000 Jul 28 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes. / Huang, Man-Fang; Liu, Pin Hui; Liu, J. S.; Kuo, Yen-Kuang; Huang, Ya Lien; Chang, Yuni; Huang, Hsu Ching; Horng, Kuo Kai; Chang, Jih-Yuan.
In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 595-602.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes
AU - Huang, Man-Fang
AU - Liu, Pin Hui
AU - Liu, J. S.
AU - Kuo, Yen-Kuang
AU - Huang, Ya Lien
AU - Chang, Yuni
AU - Huang, Hsu Ching
AU - Horng, Kuo Kai
AU - Chang, Jih-Yuan
PY - 2000/1/1
Y1 - 2000/1/1
N2 - AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.
AB - AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.
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M3 - Conference article
AN - SCOPUS:0033720833
VL - 4078
SP - 595
EP - 602
JO - Proceedings of SPIE - The International Society for Optical Engineering
JF - Proceedings of SPIE - The International Society for Optical Engineering
SN - 0277-786X
ER -