Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes

Man-Fang Huang, Pin Hui Liu, J. S. Liu, Yen-Kuang Kuo, Ya Lien Huang, Yuni Chang, Hsu Ching Huang, Kuo Kai Horng, Jih-Yuan Chang

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.

Original languageEnglish
Pages (from-to)595-602
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4078
Publication statusPublished - 2000 Jan 1
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

Fingerprint

Diode
Optical Properties
Light emitting diodes
Numerical Study
Experimental Study
light emitting diodes
Optical properties
Distributed Bragg reflectors
optical properties
Bragg reflectors
Aluminum
Liquid crystal displays
Semiconductor quantum wells
Luminance
Photoluminescence
brightness
liquid crystals
quantum wells
wafers
aluminum

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

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title = "Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes",
abstract = "AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.",
author = "Man-Fang Huang and Liu, {Pin Hui} and Liu, {J. S.} and Yen-Kuang Kuo and Huang, {Ya Lien} and Yuni Chang and Huang, {Hsu Ching} and Horng, {Kuo Kai} and Jih-Yuan Chang",
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Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes. / Huang, Man-Fang; Liu, Pin Hui; Liu, J. S.; Kuo, Yen-Kuang; Huang, Ya Lien; Chang, Yuni; Huang, Hsu Ching; Horng, Kuo Kai; Chang, Jih-Yuan.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 4078, 01.01.2000, p. 595-602.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Experimental and numerical study on the optical properties of yellow-green AlGaInP light emitting diodes

AU - Huang, Man-Fang

AU - Liu, Pin Hui

AU - Liu, J. S.

AU - Kuo, Yen-Kuang

AU - Huang, Ya Lien

AU - Chang, Yuni

AU - Huang, Hsu Ching

AU - Horng, Kuo Kai

AU - Chang, Jih-Yuan

PY - 2000/1/1

Y1 - 2000/1/1

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AB - AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.

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