Abstract
AlGaInP LEDs with emission wavelengths near 570 nm are important in liquid crystal display backlight application. However, high brightness in this spectral region is difficult to achieve due to the reduction of the radiation efficiency in the high-aluminum-containing active region and the smaller band offset between the active and the cladding region. In order to improve the performance of the 570-nm AlGaInP LEDs, we have grown several wafers with different structure designs and studied the optical properties as functions of the device temperature and the excitation power experimentally with a photoluminescence measurement system and numerically with a commercial Lastip simulation program. Specifically, important factors such as the barrier height in quantum wells, the tensile swain barrier cladding next to the MQW region, the compensated strain in MQW, and the distributed Bragg reflector are investigated. Good agreement between the experimental and numerical results is observed.
Original language | English |
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Pages (from-to) | 595-602 |
Number of pages | 8 |
Journal | Proceedings of SPIE - The International Society for Optical Engineering |
Volume | 4078 |
DOIs | |
Publication status | Published - 2000 |
Event | Optoelectronic Materials and Devices II - Taipei, Taiwan Duration: 2000 Jul 26 → 2000 Jul 28 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering