Exciton binding energy in a GaAs/AlxGa1-xAs quantum well with uniform electric field

Der San Chuu, Yu-Tai Shih

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The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.

Original languageEnglish
Pages (from-to)8054-8060
Number of pages7
JournalPhysical Review B
Issue number15
Publication statusPublished - 1991 Jan 1


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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