Exciton binding energy in a GaAs/AlxGa1-xAs quantum well with uniform electric field

Der San Chuu, Yu-Tai Shih

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

The effects of a uniform electric field on the binding energies of excitons and the subband energies in a GaAs/AlxGa1-xAs quantum well are studied by a perturbative variational approach. Our calculation is based on an effective-width infinite-well model. The effective-mass mismatch is also taken into account. Our results show that the electric field causes a large shift of the subband energy and exciton peak position. The calculated results are compared with the data observed from an optical-absorption experiment. Satisfactory agreement is obtained.

Original languageEnglish
Pages (from-to)8054-8060
Number of pages7
JournalPhysical Review B
Volume44
Issue number15
DOIs
Publication statusPublished - 1991 Jan 1

Fingerprint

Binding energy
Excitons
Semiconductor quantum wells
binding energy
Electric fields
excitons
quantum wells
electric fields
Light absorption
optical absorption
energy
causes
shift
Experiments
LDS 751
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

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Exciton binding energy in a GaAs/AlxGa1-xAs quantum well with uniform electric field. / Chuu, Der San; Shih, Yu-Tai.

In: Physical Review B, Vol. 44, No. 15, 01.01.1991, p. 8054-8060.

Research output: Contribution to journalArticle

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