Excimer laser irradiation induced suppression of off-state leakage current in organic transistors

Wei Yang Chou, Shih Ting Lin, Horng Long Cheng, Fu Ching Tang, Yow Jon Lin, Chang Feng You, Yu Wu Wang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The authors report the suppression of the off-state leakage current and subthreshold swing (SS) in inkjet-printed poly(3-hexylthiophene) thin-film transistors with asymmetric work function source and drain electrodes. Indium tin oxide (ITO) material was used as source/drain electrodes and the source electrode was irradiated by KrF excimer laser. The dominant mechanisms for the suppressive Ioff could be attributed to the increase in the work function of ITO source irradiated by the excimer laser. Lower trap state density formed on the laser irradiated source electrode. Holes could be easily injected into the channel at small lateral electric field resulting in smaller threshold voltage and SS.

Original languageEnglish
Article number222103
JournalApplied Physics Letters
Volume90
Issue number22
DOIs
Publication statusPublished - 2007 Jun 11

Fingerprint

excimer lasers
leakage
transistors
retarding
irradiation
electrodes
indium oxides
tin oxides
threshold voltage
traps
electric fields
thin films
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Chou, Wei Yang ; Lin, Shih Ting ; Cheng, Horng Long ; Tang, Fu Ching ; Lin, Yow Jon ; You, Chang Feng ; Wang, Yu Wu. / Excimer laser irradiation induced suppression of off-state leakage current in organic transistors. In: Applied Physics Letters. 2007 ; Vol. 90, No. 22.
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Excimer laser irradiation induced suppression of off-state leakage current in organic transistors. / Chou, Wei Yang; Lin, Shih Ting; Cheng, Horng Long; Tang, Fu Ching; Lin, Yow Jon; You, Chang Feng; Wang, Yu Wu.

In: Applied Physics Letters, Vol. 90, No. 22, 222103, 11.06.2007.

Research output: Contribution to journalArticle

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AU - You, Chang Feng

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