Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin, Wen Fung Liu, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

19 Citations (Scopus)


The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

Original languageEnglish
Pages (from-to)2515-2517
Number of pages3
JournalApplied Physics Letters
Issue number14
Publication statusPublished - 2004 Apr 5

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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