Abstract
The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.
Original language | English |
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Pages (from-to) | 2515-2517 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 84 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2004 Apr 5 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)