Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin; Wen Fung Liu; Ching Ting Lee

doi:10.1063/1.1695436

Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin, Wen Fung Liu, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

Original language	English
Pages (from-to)	2515-2517
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695436
Publication status	Published - 2004 Apr 5

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{db14cc102d1d494f80d9feff0e57c50c,

title = "Excimer-laser-induced activation of Mg-doped GaN layers",

abstract = "The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.",

author = "Lin, {Yow Jon} and Liu, {Wen Fung} and Lee, {Ching Ting}",

year = "2004",

month = apr,

day = "5",

doi = "10.1063/1.1695436",

language = "English",

volume = "84",

pages = "2515--2517",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

}

TY - JOUR

T1 - Excimer-laser-induced activation of Mg-doped GaN layers

AU - Lin, Yow Jon

AU - Liu, Wen Fung

AU - Lee, Ching Ting

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

AB - The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

UR - http://www.scopus.com/inward/record.url?scp=2342648075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342648075&partnerID=8YFLogxK

U2 - 10.1063/1.1695436

DO - 10.1063/1.1695436

M3 - Article

AN - SCOPUS:2342648075

VL - 84

SP - 2515

EP - 2517

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -