Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin, Wen Fung Liu, Ching Ting Lee

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

Original languageEnglish
Pages (from-to)2515-2517
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number14
DOIs
Publication statusPublished - 2004 Apr 5

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excimer lasers
activation
dissociation
x ray spectroscopy
interstitials
photoelectron spectroscopy
photoluminescence
irradiation
lasers

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Lin, Yow Jon ; Liu, Wen Fung ; Lee, Ching Ting. / Excimer-laser-induced activation of Mg-doped GaN layers. In: Applied Physics Letters. 2004 ; Vol. 84, No. 14. pp. 2515-2517.
@article{db14cc102d1d494f80d9feff0e57c50c,
title = "Excimer-laser-induced activation of Mg-doped GaN layers",
abstract = "The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.",
author = "Lin, {Yow Jon} and Liu, {Wen Fung} and Lee, {Ching Ting}",
year = "2004",
month = "4",
day = "5",
doi = "10.1063/1.1695436",
language = "English",
volume = "84",
pages = "2515--2517",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "14",

}

Excimer-laser-induced activation of Mg-doped GaN layers. / Lin, Yow Jon; Liu, Wen Fung; Lee, Ching Ting.

In: Applied Physics Letters, Vol. 84, No. 14, 05.04.2004, p. 2515-2517.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Excimer-laser-induced activation of Mg-doped GaN layers

AU - Lin, Yow Jon

AU - Liu, Wen Fung

AU - Lee, Ching Ting

PY - 2004/4/5

Y1 - 2004/4/5

N2 - The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

AB - The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

UR - http://www.scopus.com/inward/record.url?scp=2342648075&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2342648075&partnerID=8YFLogxK

U2 - 10.1063/1.1695436

DO - 10.1063/1.1695436

M3 - Article

AN - SCOPUS:2342648075

VL - 84

SP - 2515

EP - 2517

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 14

ER -