Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin; Wen Fung Liu; Ching Ting Lee

doi:10.1063/1.1695436

Excimer-laser-induced activation of Mg-doped GaN layers

Yow Jon Lin, Wen Fung Liu, Ching Ting Lee

Graduate Institute of Photonics

Research output: Contribution to journal › Article

19 Citations (Scopus)

Abstract

The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

Original language	English
Pages (from-to)	2515-2517
Number of pages	3
Journal	Applied Physics Letters
Volume	84
Issue number	14
DOIs	https://doi.org/10.1063/1.1695436
Publication status	Published - 2004 Apr 5

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Lin, Y. J., Liu, W. F., & Lee, C. T. (2004). Excimer-laser-induced activation of Mg-doped GaN layers. Applied Physics Letters, 84(14), 2515-2517. https://doi.org/10.1063/1.1695436

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AB - The 248 nm excimer-laser-induced activation of the Mg-doped GaN layers is discussed. It is found that the dissociation of the Mg-H complexes and the formation of hydrogenated Ga vacancies and/or the Ga vacancies occupied by interstitial Mg led to an increase in the hole concentration during the laser irradiation process. The photoluminescence and x-ray photoelectron spectroscopy measurements are used for the purpose. The results show that the excimer-laser-induced activation is attributed to the dissociation of the Mg-H complexes.

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10.1063/1.1695436