Abstract
A study was made of the exchange bias effect in a structure of SiO 2/Ta (5 nm)/NiFe (7 nm)/IrMn (10 nm)/CoFeB (7 nm)/Ta (5 nm) with nanoscale antidot arrays. The nanostructure comprised rhomboid lattice antidot arrays with antidot diameters from 150 to 300 nm and a rhomboid lattice period of 500 nm. Enhancements of exchange bias HEX and coercivity H C were observed in the nanostructure antidot arrays compared to continuous film. These effects were mainly ascribed to the physical limitations on ferromagnetic and antiferromagnetic layers due to the presence of antidots. In antidot arrays, due to the presence of nonmagnetic holes, the ferromagnetic-ferromagnetic interactions in FM layer are reduced, leading to smaller ferromagnetic domains and larger exchange bias with the random-field model. In this paper, the relation between the antidot diameter size and exchange bias was studied.
| Original language | English |
|---|---|
| Article number | 6027667 |
| Pages (from-to) | 3494-3496 |
| Number of pages | 3 |
| Journal | IEEE Transactions on Magnetics |
| Volume | 47 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
}
Exchange bias in NiFe/IrMn/CoFeB antidot arrays. / Huang, Chao Hsien; Lo, Sheng Yu; Wu, Tian Chiuan; Wu, Jong Ching; Horng, Lance.
In: IEEE Transactions on Magnetics, Vol. 47, No. 10, 6027667, 01.10.2011, p. 3494-3496.Research output: Contribution to journal › Article
TY - JOUR
T1 - Exchange bias in NiFe/IrMn/CoFeB antidot arrays
AU - Huang, Chao Hsien
AU - Lo, Sheng Yu
AU - Wu, Tian Chiuan
AU - Wu, Jong Ching
AU - Horng, Lance
PY - 2011/10/1
Y1 - 2011/10/1
N2 - A study was made of the exchange bias effect in a structure of SiO 2/Ta (5 nm)/NiFe (7 nm)/IrMn (10 nm)/CoFeB (7 nm)/Ta (5 nm) with nanoscale antidot arrays. The nanostructure comprised rhomboid lattice antidot arrays with antidot diameters from 150 to 300 nm and a rhomboid lattice period of 500 nm. Enhancements of exchange bias HEX and coercivity H C were observed in the nanostructure antidot arrays compared to continuous film. These effects were mainly ascribed to the physical limitations on ferromagnetic and antiferromagnetic layers due to the presence of antidots. In antidot arrays, due to the presence of nonmagnetic holes, the ferromagnetic-ferromagnetic interactions in FM layer are reduced, leading to smaller ferromagnetic domains and larger exchange bias with the random-field model. In this paper, the relation between the antidot diameter size and exchange bias was studied.
AB - A study was made of the exchange bias effect in a structure of SiO 2/Ta (5 nm)/NiFe (7 nm)/IrMn (10 nm)/CoFeB (7 nm)/Ta (5 nm) with nanoscale antidot arrays. The nanostructure comprised rhomboid lattice antidot arrays with antidot diameters from 150 to 300 nm and a rhomboid lattice period of 500 nm. Enhancements of exchange bias HEX and coercivity H C were observed in the nanostructure antidot arrays compared to continuous film. These effects were mainly ascribed to the physical limitations on ferromagnetic and antiferromagnetic layers due to the presence of antidots. In antidot arrays, due to the presence of nonmagnetic holes, the ferromagnetic-ferromagnetic interactions in FM layer are reduced, leading to smaller ferromagnetic domains and larger exchange bias with the random-field model. In this paper, the relation between the antidot diameter size and exchange bias was studied.
UR - http://www.scopus.com/inward/record.url?scp=80053530593&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053530593&partnerID=8YFLogxK
U2 - 10.1109/TMAG.2011.2158526
DO - 10.1109/TMAG.2011.2158526
M3 - Article
AN - SCOPUS:80053530593
VL - 47
SP - 3494
EP - 3496
JO - IEEE Transactions on Magnetics
JF - IEEE Transactions on Magnetics
SN - 0018-9464
IS - 10
M1 - 6027667
ER -