Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

Chun Yi Chai, Jung A. Huang, Yeong-Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

Original languageEnglish
Pages (from-to)2110-2111
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume35
Issue number4 A
Publication statusPublished - 1996 Apr 1

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Diffusion barriers
Ohmic contacts
Metallizing
electric contacts
Rapid thermal annealing
electrical resistivity
annealing
Annealing
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chai, Chun Yi ; Huang, Jung A. ; Lai, Yeong-Lin ; Wu, Janne Wha ; Chang, Chun Yen ; Chan, Yi Jen ; Cheng, Huang Chung. / Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 1996 ; Vol. 35, No. 4 A. pp. 2110-2111.
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abstract = "Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.",
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Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier. / Chai, Chun Yi; Huang, Jung A.; Lai, Yeong-Lin; Wu, Janne Wha; Chang, Chun Yen; Chan, Yi Jen; Cheng, Huang Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 4 A, 01.04.1996, p. 2110-2111.

Research output: Contribution to journalArticle

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T1 - Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

AU - Chai, Chun Yi

AU - Huang, Jung A.

AU - Lai, Yeong-Lin

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AU - Chang, Chun Yen

AU - Chan, Yi Jen

AU - Cheng, Huang Chung

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AB - Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

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