Abstract
Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.
| Original language | English |
|---|---|
| Pages (from-to) | 2110-2111 |
| Number of pages | 2 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 35 |
| Issue number | 4 A |
| DOIs | |
| Publication status | Published - 1996 Apr |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Chai, C. Y., Huang, J. A., Lai, Y. L., Wu, J. W., Chang, C. Y., Chan, Y. J., & Cheng, H. C. (1996). Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 35(4 A), 2110-2111. https://doi.org/10.1143/jjap.35.2110