Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

Chun Yi Chai; Jung A. Huang; Yong Lin Lai; Janne Wha Wu; Chun Yen Chang; Yi Jen Chan; Huang Chung Cheng

doi:10.1143/jjap.35.2110

Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

Chun Yi Chai, Jung A. Huang, Yong Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n⁺-GaAs with the Sidoping concentration of about 2 × 10¹⁸ cm^-3. The minimum specific contact resistivity as low as 1.2 × 10^-7 Ω·cm² can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

Original language	English
Pages (from-to)	2110-2111
Number of pages	2
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	35
Issue number	4 A
DOIs	https://doi.org/10.1143/jjap.35.2110
Publication status	Published - 1996 Apr

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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@article{0be713e36c9b4624933d550d969ca983,

title = "Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier",

abstract = "Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.",

author = "Chai, {Chun Yi} and Huang, {Jung A.} and Lai, {Yong Lin} and Wu, {Janne Wha} and Chang, {Chun Yen} and Chan, {Yi Jen} and Cheng, {Huang Chung}",

year = "1996",

month = apr,

doi = "10.1143/jjap.35.2110",

language = "English",

volume = "35",

pages = "2110--2111",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "4 A",

}

Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier. / Chai, Chun Yi; Huang, Jung A.; Lai, Yong Lin; Wu, Janne Wha; Chang, Chun Yen; Chan, Yi Jen; Cheng, Huang Chung.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 35, No. 4 A, 04.1996, p. 2110-2111.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

AU - Chai, Chun Yi

AU - Huang, Jung A.

AU - Lai, Yong Lin

AU - Wu, Janne Wha

AU - Chang, Chun Yen

AU - Chan, Yi Jen

AU - Cheng, Huang Chung

PY - 1996/4

Y1 - 1996/4

N2 - Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

AB - Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

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