Excellent Au/Ge/Pd ohmic contacts to n-type GaAs using Mo/Ti as the diffusion barrier

Chun Yi Chai, Jung A. Huang, Yong Lin Lai, Janne Wha Wu, Chun Yen Chang, Yi Jen Chan, Huang Chung Cheng

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5 Citations (Scopus)


Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.

Original languageEnglish
Pages (from-to)2110-2111
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Issue number4 A
Publication statusPublished - 1996 Apr

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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