Au/Ge/Pd metallization system using Mo/Ti as the diffusion barrier between the Au overlayer and the Ge/Pd underlayer has been performed for the first time to achieve excellent ohmic contacts to n+-GaAs with the Sidoping concentration of about 2 × 1018 cm-3. The minimum specific contact resistivity as low as 1.2 × 10-7 Ω·cm2 can be obtained after the rapid thermal annealing at 325°C for 60 s, which is much lower than those of the conventional Au/Ge/Pd metallization systems. Furthermore, the available annealing temperature range for such low specific contact resistivities is also significantly extended from 325°C to 400°C. The improvement is attributed to the effective retardation of As-outdiffusion by the Mo/Ti barrier.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 A|
|Publication status||Published - 1996 Apr|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)