ESD-reliability analysis and strategy of the GaN-based light-emitting diodes

Shen Li Chen, Shawn Chang, Chun Hsing Shih, Hsun-Hsiang Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

Original languageEnglish
Title of host publicationRecent Development in Machining, Materials and Mechanical Technologies
EditorsJyh-Chen Chen, Usuki Hiroshi, Sheng-Wei Lee, Yiin-Kuen Fuh
PublisherTrans Tech Publications Ltd
Pages57-62
Number of pages6
ISBN (Print)9783038354956
DOIs
Publication statusPublished - 2015 Jan 1
EventInternational Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014 - Taipei City, Taiwan
Duration: 2014 Aug 312014 Sep 5

Publication series

NameKey Engineering Materials
Volume656-657
ISSN (Print)1013-9826

Other

OtherInternational Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014
CountryTaiwan
CityTaipei City
Period14-08-3114-09-05

Fingerprint

Electrostatic discharge
Reliability analysis
Light emitting diodes
Gallium nitride
Physical properties
Semiconductor lasers
Diodes
Energy gap
gallium nitride

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Chen, S. L., Chang, S., Shih, C. H., & Chen, H-H. (2015). ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. In J-C. Chen, U. Hiroshi, S-W. Lee, & Y-K. Fuh (Eds.), Recent Development in Machining, Materials and Mechanical Technologies (pp. 57-62). (Key Engineering Materials; Vol. 656-657). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/KEM.656-657.57
Chen, Shen Li ; Chang, Shawn ; Shih, Chun Hsing ; Chen, Hsun-Hsiang. / ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. Recent Development in Machining, Materials and Mechanical Technologies. editor / Jyh-Chen Chen ; Usuki Hiroshi ; Sheng-Wei Lee ; Yiin-Kuen Fuh. Trans Tech Publications Ltd, 2015. pp. 57-62 (Key Engineering Materials).
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abstract = "Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.",
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Chen, SL, Chang, S, Shih, CH & Chen, H-H 2015, ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. in J-C Chen, U Hiroshi, S-W Lee & Y-K Fuh (eds), Recent Development in Machining, Materials and Mechanical Technologies. Key Engineering Materials, vol. 656-657, Trans Tech Publications Ltd, pp. 57-62, International Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014, Taipei City, Taiwan, 14-08-31. https://doi.org/10.4028/www.scientific.net/KEM.656-657.57

ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. / Chen, Shen Li; Chang, Shawn; Shih, Chun Hsing; Chen, Hsun-Hsiang.

Recent Development in Machining, Materials and Mechanical Technologies. ed. / Jyh-Chen Chen; Usuki Hiroshi; Sheng-Wei Lee; Yiin-Kuen Fuh. Trans Tech Publications Ltd, 2015. p. 57-62 (Key Engineering Materials; Vol. 656-657).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Chen, Shen Li

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N2 - Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

AB - Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

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Chen SL, Chang S, Shih CH, Chen H-H. ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. In Chen J-C, Hiroshi U, Lee S-W, Fuh Y-K, editors, Recent Development in Machining, Materials and Mechanical Technologies. Trans Tech Publications Ltd. 2015. p. 57-62. (Key Engineering Materials). https://doi.org/10.4028/www.scientific.net/KEM.656-657.57