Abstract
Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.
| Original language | English |
|---|---|
| Title of host publication | Recent Development in Machining, Materials and Mechanical Technologies |
| Editors | Jyh-Chen Chen, Usuki Hiroshi, Sheng-Wei Lee, Yiin-Kuen Fuh |
| Publisher | Trans Tech Publications Ltd |
| Pages | 57-62 |
| Number of pages | 6 |
| ISBN (Print) | 9783038354956 |
| DOIs | |
| Publication status | Published - 2015 Jan 1 |
| Event | International Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014 - Taipei City, Taiwan Duration: 2014 Aug 31 → 2014 Sep 5 |
Publication series
| Name | Key Engineering Materials |
|---|---|
| Volume | 656-657 |
| ISSN (Print) | 1013-9826 |
Other
| Other | International Conference on Machining, Materials and Mechanical Technologies, IC3MT 2014 |
|---|---|
| Country | Taiwan |
| City | Taipei City |
| Period | 14-08-31 → 14-09-05 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
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ESD-reliability analysis and strategy of the GaN-based light-emitting diodes. / Chen, Shen Li; Chang, Shawn; Shih, Chun Hsing; Chen, Hsun-Hsiang.
Recent Development in Machining, Materials and Mechanical Technologies. ed. / Jyh-Chen Chen; Usuki Hiroshi; Sheng-Wei Lee; Yiin-Kuen Fuh. Trans Tech Publications Ltd, 2015. p. 57-62 (Key Engineering Materials; Vol. 656-657).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - ESD-reliability analysis and strategy of the GaN-based light-emitting diodes
AU - Chen, Shen Li
AU - Chang, Shawn
AU - Shih, Chun Hsing
AU - Chen, Hsun-Hsiang
PY - 2015/1/1
Y1 - 2015/1/1
N2 - Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.
AB - Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. The gallium nitride has many excellent physical properties; however in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in Human-body model (HBM), Machine model (MM) reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.
UR - http://www.scopus.com/inward/record.url?scp=84952320988&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84952320988&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/KEM.656-657.57
DO - 10.4028/www.scientific.net/KEM.656-657.57
M3 - Conference contribution
AN - SCOPUS:84952320988
SN - 9783038354956
T3 - Key Engineering Materials
SP - 57
EP - 62
BT - Recent Development in Machining, Materials and Mechanical Technologies
A2 - Chen, Jyh-Chen
A2 - Hiroshi, Usuki
A2 - Lee, Sheng-Wei
A2 - Fuh, Yiin-Kuen
PB - Trans Tech Publications Ltd
ER -