Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108))

Yu Lin Wang; F. Ren; Yu Zhang; Q. Sun; C. D. Yerino; Tsung-Shine Ko; Y. S. Cho; I. H. Lee; J. Han; S. J. Pearton

doi:10.1063/1.3168656

Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108))

Yu Lin Wang, F. Ren, Yu Zhang, Q. Sun, C. D. Yerino, Tsung-Shine Ko, Y. S. Cho, I. H. Lee, J. Han, S. J. Pearton

Department of Electronic Engineering

Research output: Contribution to journal › Comment/debate

Original language	English
Article number	019903
Journal	Applied Physics Letters
Volume	95
Issue number	1
DOIs	https://doi.org/10.1063/1.3168656
Publication status	Published - 2009 Jul 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Wang, Y. L., Ren, F., Zhang, Y., Sun, Q., Yerino, C. D., Ko, T-S., Cho, Y. S., Lee, I. H., Han, J., & Pearton, S. J. (2009). Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108)). Applied Physics Letters, 95(1), [019903]. https://doi.org/10.1063/1.3168656

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Erratum : Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108)). / Wang, Yu Lin; Ren, F.; Zhang, Yu; Sun, Q.; Yerino, C. D.; Ko, Tsung-Shine; Cho, Y. S.; Lee, I. H.; Han, J.; Pearton, S. J.

In: Applied Physics Letters, Vol. 95, No. 1, 019903, 20.07.2009.

Research output: Contribution to journal › Comment/debate

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AU - Yerino, C. D.

AU - Ko, Tsung-Shine

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AU - Lee, I. H.

AU - Han, J.

AU - Pearton, S. J.

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Access to Document

10.1063/1.3168656