Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108))

Yu Lin Wang, F. Ren, Yu Zhang, Q. Sun, C. D. Yerino, Tsung-Shine Ko, Y. S. Cho, I. H. Lee, J. Han, S. J. Pearton

Research output: Contribution to journalComment/debate

Original languageEnglish
Article number019903
JournalApplied Physics Letters
Volume95
Issue number1
DOIs
Publication statusPublished - 2009 Jul 20

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Wang, Y. L., Ren, F., Zhang, Y., Sun, Q., Yerino, C. D., Ko, T-S., Cho, Y. S., Lee, I. H., Han, J., & Pearton, S. J. (2009). Erratum: Improved hydrogen detection sensitivity in N-polar GaN Schottky diodes (Applied Physics Letters (2009) 94 (212108)). Applied Physics Letters, 95(1), [019903]. https://doi.org/10.1063/1.3168656