Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Chia Chu Cheng, Chu Chun Wu, Yen Ting Fan, Jenq-Shinn Wu, Sheng Di Lin

Research output: Contribution to journalArticle

Abstract

Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

Original languageEnglish
Article number095029
JournalAIP Advances
Volume8
Issue number9
DOIs
Publication statusPublished - 2018 Sep 1

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aluminum
acceleration (physics)
high electron mobility transistors
metals
epitaxy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Cheng, Chia Chu ; Wu, Chu Chun ; Fan, Yen Ting ; Wu, Jenq-Shinn ; Lin, Sheng Di. / Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms. In: AIP Advances. 2018 ; Vol. 8, No. 9.
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Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms. / Cheng, Chia Chu; Wu, Chu Chun; Fan, Yen Ting; Wu, Jenq-Shinn; Lin, Sheng Di.

In: AIP Advances, Vol. 8, No. 9, 095029, 01.09.2018.

Research output: Contribution to journalArticle

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