Abstract
Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.
| Original language | English |
|---|---|
| Article number | 095029 |
| Journal | AIP Advances |
| Volume | 8 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2018 Sep 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms. / Cheng, Chia Chu; Wu, Chu Chun; Fan, Yen Ting; Wu, Jenq-Shinn; Lin, Sheng Di.
In: AIP Advances, Vol. 8, No. 9, 095029, 01.09.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms
AU - Cheng, Chia Chu
AU - Wu, Chu Chun
AU - Fan, Yen Ting
AU - Wu, Jenq-Shinn
AU - Lin, Sheng Di
PY - 2018/9/1
Y1 - 2018/9/1
N2 - Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.
AB - Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.
UR - http://www.scopus.com/inward/record.url?scp=85054406153&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85054406153&partnerID=8YFLogxK
U2 - 10.1063/1.5040382
DO - 10.1063/1.5040382
M3 - Article
AN - SCOPUS:85054406153
VL - 8
JO - AIP Advances
JF - AIP Advances
SN - 2158-3226
IS - 9
M1 - 095029
ER -