Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Chia Chu Cheng, Chu Chun Wu, Yen Ting Fan, Jenq Shinn Wu, Sheng Di Lin

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

Original languageEnglish
Article number095029
JournalAIP Advances
Issue number9
Publication statusPublished - 2018 Sep 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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