Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Chia Chu Cheng; Chu Chun Wu; Yen Ting Fan; Jenq Shinn Wu; Sheng Di Lin

doi:10.1063/1.5040382

Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

Chia Chu Cheng, Chu Chun Wu, Yen Ting Fan, Jenq Shinn Wu, Sheng Di Lin

Department of Electronic Engineering

Research output: Contribution to journal › Article

Abstract

Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

Original language	English
Article number	095029
Journal	AIP Advances
Volume	8
Issue number	9
DOIs	https://doi.org/10.1063/1.5040382
Publication status	Published - 2018 Sep 1

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All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

Cheng, C. C., Wu, C. C., Fan, Y. T., Wu, J. S., & Lin, S. D. (2018). Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms. AIP Advances, 8(9), [095029]. https://doi.org/10.1063/1.5040382

@article{e1f698bfc9cd40409554c397c52c5db2,

title = "Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms",

abstract = "Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.",

author = "Cheng, {Chia Chu} and Wu, {Chu Chun} and Fan, {Yen Ting} and Wu, {Jenq Shinn} and Lin, {Sheng Di}",

year = "2018",

month = "9",

day = "1",

doi = "10.1063/1.5040382",

language = "English",

volume = "8",

journal = "AIP Advances",

issn = "2158-3226",

publisher = "American Institute of Physics Publising LLC",

number = "9",

}

TY - JOUR

T1 - Epitaxial GaAs and pHEMT on aluminum-transformed AlAs nanofilms

AU - Cheng, Chia Chu

AU - Wu, Chu Chun

AU - Fan, Yen Ting

AU - Wu, Jenq Shinn

AU - Lin, Sheng Di

PY - 2018/9/1

Y1 - 2018/9/1

N2 - Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

AB - Heterogeneous epitaxial growth between semiconductors and metals boosts novel device development and enables various applications. In this work, we have investigated the epitaxial growth of GaAs layers on top of a nanoscale aluminium-transformed AlAs film. The grown GaAs layers are single-crystalline and of high-quality, that has been evidenced by using various material characterization methods and by fabricating their high-electron mobility transistors. We found that an intriguing process named as “arsenidation” of aluminium film plays a key role in the successful epitaxy. Our work opens a window for growing semiconductor/metal hetero-structures for various device applications in the future.

UR - http://www.scopus.com/inward/record.url?scp=85054406153&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054406153&partnerID=8YFLogxK

U2 - 10.1063/1.5040382

DO - 10.1063/1.5040382

M3 - Article

AN - SCOPUS:85054406153

VL - 8

JO - AIP Advances

JF - AIP Advances

SN - 2158-3226

IS - 9

M1 - 095029

ER -

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10.1063/1.5040382