Enhancement of Schottky barrier height on p-type GaN by (NH 4)2Sx treatment

Yow Jon Lin, Chang Feng You, Chi Sen Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Barrier height values of Ni contacts to (NH4)2S x-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission (TFE). Furthermore, the calculated barrier height value of Ni contacts to (NH4)2S x-treated p-GaN using the TFE model is close to the Schottky limit, which is in good agreement with the observed result by XPS measurements and suggests that (NH4)2Sx surface treatment leads to the removal of native oxides and the reduction of the surface state related to oxygen-induced and nitrogen-vacancy defects.

Original languageEnglish
Article number053706
JournalJournal of Applied Physics
Volume99
Issue number5
DOIs
Publication statusPublished - 2006 Mar 1

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thermionic emission
x ray spectroscopy
field emission
electric contacts
photoelectron spectroscopy
augmentation
defects
surface treatment
depletion
nitrogen
oxides
electric potential
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Enhancement of Schottky barrier height on p-type GaN by (NH 4)2Sx treatment",
abstract = "Barrier height values of Ni contacts to (NH4)2S x-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission (TFE). Furthermore, the calculated barrier height value of Ni contacts to (NH4)2S x-treated p-GaN using the TFE model is close to the Schottky limit, which is in good agreement with the observed result by XPS measurements and suggests that (NH4)2Sx surface treatment leads to the removal of native oxides and the reduction of the surface state related to oxygen-induced and nitrogen-vacancy defects.",
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Enhancement of Schottky barrier height on p-type GaN by (NH 4)2Sx treatment. / Lin, Yow Jon; You, Chang Feng; Lee, Chi Sen.

In: Journal of Applied Physics, Vol. 99, No. 5, 053706, 01.03.2006.

Research output: Contribution to journalArticle

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AU - Lin, Yow Jon

AU - You, Chang Feng

AU - Lee, Chi Sen

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N2 - Barrier height values of Ni contacts to (NH4)2S x-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission (TFE). Furthermore, the calculated barrier height value of Ni contacts to (NH4)2S x-treated p-GaN using the TFE model is close to the Schottky limit, which is in good agreement with the observed result by XPS measurements and suggests that (NH4)2Sx surface treatment leads to the removal of native oxides and the reduction of the surface state related to oxygen-induced and nitrogen-vacancy defects.

AB - Barrier height values of Ni contacts to (NH4)2S x-treated p-type GaN (p-GaN) were obtained from current-voltage and x-ray photoelectron spectroscopy (XPS) measurements in this study. The induced deep level defect band through high Mg doping led to a reduction of the depletion layer width in the p-GaN near the interface and an increase in the probability of thermionic field emission (TFE). Furthermore, the calculated barrier height value of Ni contacts to (NH4)2S x-treated p-GaN using the TFE model is close to the Schottky limit, which is in good agreement with the observed result by XPS measurements and suggests that (NH4)2Sx surface treatment leads to the removal of native oxides and the reduction of the surface state related to oxygen-induced and nitrogen-vacancy defects.

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