Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

Yow-Jon Lin, Yi Min Chin

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

Original languageEnglish
Article number173301
JournalApplied Physics Letters
Volume103
Issue number17
DOIs
Publication statusPublished - 2013 Oct 21

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photocurrents
graphene
diodes
oxides
augmentation
electromagnetic absorption
time constant
transistors
thin films
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets. / Lin, Yow-Jon; Chin, Yi Min.

In: Applied Physics Letters, Vol. 103, No. 17, 173301, 21.10.2013.

Research output: Contribution to journalArticle

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