Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

Yow Jon Lin; Yi Min Chin

doi:10.1063/1.4826559

Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

Yow Jon Lin, Yi Min Chin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

Original language	English
Article number	173301
Journal	Applied Physics Letters
Volume	103
Issue number	17
DOIs	https://doi.org/10.1063/1.4826559
Publication status	Published - 2013 Oct 21

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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@article{b5f6387b72704dc48c336d2a8025387b,

title = "Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets",

abstract = "In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.",

author = "Lin, {Yow Jon} and Chin, {Yi Min}",

year = "2013",

month = oct,

day = "21",

doi = "10.1063/1.4826559",

language = "English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

}

TY - JOUR

T1 - Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets

AU - Lin, Yow Jon

AU - Chin, Yi Min

PY - 2013/10/21

Y1 - 2013/10/21

N2 - In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

AB - In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

UR - http://www.scopus.com/inward/record.url?scp=84887112957&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887112957&partnerID=8YFLogxK

U2 - 10.1063/1.4826559

DO - 10.1063/1.4826559

M3 - Article

AN - SCOPUS:84887112957

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 173301

ER -