Abstract
In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.
| Original language | English |
|---|---|
| Article number | 173301 |
| Journal | Applied Physics Letters |
| Volume | 103 |
| Issue number | 17 |
| DOIs | |
| Publication status | Published - 2013 Oct 21 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
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Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets. / Lin, Yow Jon; Chin, Yi Min.
In: Applied Physics Letters, Vol. 103, No. 17, 173301, 21.10.2013.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancement of photocurrent of poly(3-hexylthiophene)/n-type Si diodes by incorporating the reduced graphene oxide sheets
AU - Lin, Yow Jon
AU - Chin, Yi Min
PY - 2013/10/21
Y1 - 2013/10/21
N2 - In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.
AB - In this study, the effect of the incorporation of the reduced graphene oxide (RGO) sheets into poly(3-hexylthiophene) (P3HT) on photocurrent in the RGO-doped P3HT/n-type Si diode was examined. Photocurrent proportional to RGO doping was observed. Charge detrapping phenomena are studied through time domain measurement for P3HT-based thin-film transistors. Results revealed that RGO influences the photoresponse by increasing the number of the trapped electrons in RGO as well as providing additional holes that serve to reduce the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.
UR - http://www.scopus.com/inward/record.url?scp=84887112957&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84887112957&partnerID=8YFLogxK
U2 - 10.1063/1.4826559
DO - 10.1063/1.4826559
M3 - Article
AN - SCOPUS:84887112957
VL - 103
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 17
M1 - 173301
ER -