Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers

Yen-Kuang Kuo, Miao Chan Tsai, Sheng Horng Yen, Ta Cheng Hsu, Yu Jiun Shen

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm are theoretically investigated by using the APSYS simulation program. It is found that the light performance can be enhanced effectively when the conventional GaN barrier layers are replaced by In0.02Ga 0.98N and In0.05Ga0.95N barrier layers. The numerical results indicate that the output power of LEDs with In 0.02Ga0.98N barrier layers is improved gradually above the emission wavelength of 410 nm. However, when the In0.05Ga 0.95N barrier layers are used, the emitting power of LEDs varies significantly when the emission wavelength changes. When the emission wavelength is 410 nm, the use of GaN and In0.02Ga0.98N barrier layers can lead to higher output power. However, if the emission wavelength is 445 nm, the use of In0.05Ga0.95N barrier layers is beneficial for maintaining high output power.

Original languageEnglish
Article number5184865
Pages (from-to)1115-1121
Number of pages7
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume15
Issue number4
DOIs
Publication statusPublished - 2009 Aug 4

Fingerprint

barrier layers
Indium
Light emitting diodes
indium
light emitting diodes
Wavelength
augmentation
wavelengths
output
Optical properties
optical properties
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Kuo, Yen-Kuang ; Tsai, Miao Chan ; Yen, Sheng Horng ; Hsu, Ta Cheng ; Shen, Yu Jiun. / Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers. In: IEEE Journal on Selected Topics in Quantum Electronics. 2009 ; Vol. 15, No. 4. pp. 1115-1121.
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abstract = "The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm are theoretically investigated by using the APSYS simulation program. It is found that the light performance can be enhanced effectively when the conventional GaN barrier layers are replaced by In0.02Ga 0.98N and In0.05Ga0.95N barrier layers. The numerical results indicate that the output power of LEDs with In 0.02Ga0.98N barrier layers is improved gradually above the emission wavelength of 410 nm. However, when the In0.05Ga 0.95N barrier layers are used, the emitting power of LEDs varies significantly when the emission wavelength changes. When the emission wavelength is 410 nm, the use of GaN and In0.02Ga0.98N barrier layers can lead to higher output power. However, if the emission wavelength is 445 nm, the use of In0.05Ga0.95N barrier layers is beneficial for maintaining high output power.",
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Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers. / Kuo, Yen-Kuang; Tsai, Miao Chan; Yen, Sheng Horng; Hsu, Ta Cheng; Shen, Yu Jiun.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 15, No. 4, 5184865, 04.08.2009, p. 1115-1121.

Research output: Contribution to journalArticle

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AU - Kuo, Yen-Kuang

AU - Tsai, Miao Chan

AU - Yen, Sheng Horng

AU - Hsu, Ta Cheng

AU - Shen, Yu Jiun

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