Abstract
The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm are theoretically investigated by using the APSYS simulation program. It is found that the light performance can be enhanced effectively when the conventional GaN barrier layers are replaced by In0.02Ga 0.98N and In0.05Ga0.95N barrier layers. The numerical results indicate that the output power of LEDs with In 0.02Ga0.98N barrier layers is improved gradually above the emission wavelength of 410 nm. However, when the In0.05Ga 0.95N barrier layers are used, the emitting power of LEDs varies significantly when the emission wavelength changes. When the emission wavelength is 410 nm, the use of GaN and In0.02Ga0.98N barrier layers can lead to higher output power. However, if the emission wavelength is 445 nm, the use of In0.05Ga0.95N barrier layers is beneficial for maintaining high output power.
| Original language | English |
|---|---|
| Article number | 5184865 |
| Pages (from-to) | 1115-1121 |
| Number of pages | 7 |
| Journal | IEEE Journal on Selected Topics in Quantum Electronics |
| Volume | 15 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2009 Aug 4 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers. / Kuo, Yen-Kuang; Tsai, Miao Chan; Yen, Sheng Horng; Hsu, Ta Cheng; Shen, Yu Jiun.
In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 15, No. 4, 5184865, 04.08.2009, p. 1115-1121.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhancement of light power for blue InGaN LEDs by using low-indium-content InGaN barriers
AU - Kuo, Yen-Kuang
AU - Tsai, Miao Chan
AU - Yen, Sheng Horng
AU - Hsu, Ta Cheng
AU - Shen, Yu Jiun
PY - 2009/8/4
Y1 - 2009/8/4
N2 - The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm are theoretically investigated by using the APSYS simulation program. It is found that the light performance can be enhanced effectively when the conventional GaN barrier layers are replaced by In0.02Ga 0.98N and In0.05Ga0.95N barrier layers. The numerical results indicate that the output power of LEDs with In 0.02Ga0.98N barrier layers is improved gradually above the emission wavelength of 410 nm. However, when the In0.05Ga 0.95N barrier layers are used, the emitting power of LEDs varies significantly when the emission wavelength changes. When the emission wavelength is 410 nm, the use of GaN and In0.02Ga0.98N barrier layers can lead to higher output power. However, if the emission wavelength is 445 nm, the use of In0.05Ga0.95N barrier layers is beneficial for maintaining high output power.
AB - The optical properties of blue InGaN LEDs that emit in a spectral range from 410 to 445 nm are theoretically investigated by using the APSYS simulation program. It is found that the light performance can be enhanced effectively when the conventional GaN barrier layers are replaced by In0.02Ga 0.98N and In0.05Ga0.95N barrier layers. The numerical results indicate that the output power of LEDs with In 0.02Ga0.98N barrier layers is improved gradually above the emission wavelength of 410 nm. However, when the In0.05Ga 0.95N barrier layers are used, the emitting power of LEDs varies significantly when the emission wavelength changes. When the emission wavelength is 410 nm, the use of GaN and In0.02Ga0.98N barrier layers can lead to higher output power. However, if the emission wavelength is 445 nm, the use of In0.05Ga0.95N barrier layers is beneficial for maintaining high output power.
UR - http://www.scopus.com/inward/record.url?scp=70349327407&partnerID=8YFLogxK
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U2 - 10.1109/JSTQE.2009.2015150
DO - 10.1109/JSTQE.2009.2015150
M3 - Article
AN - SCOPUS:70349327407
VL - 15
SP - 1115
EP - 1121
JO - IEEE Journal of Selected Topics in Quantum Electronics
JF - IEEE Journal of Selected Topics in Quantum Electronics
SN - 1077-260X
IS - 4
M1 - 5184865
ER -