Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

C. H. Lin, C. F. Lai, T. S. Ko, H. W. Huang, H. C. Kuo, Y. Y. Hung, K. M. Leung, C. C. Yu, R. J. Tsai, C. K. Lee, T. C. Lu, S. C. Wang

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Abstract

Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

Original languageEnglish
Pages (from-to)2050-2052
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number19
DOIs
Publication statusPublished - 2006 Oct 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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    Lin, C. H., Lai, C. F., Ko, T. S., Huang, H. W., Kuo, H. C., Hung, Y. Y., Leung, K. M., Yu, C. C., Tsai, R. J., Lee, C. K., Lu, T. C., & Wang, S. C. (2006). Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector. IEEE Photonics Technology Letters, 18(19), 2050-2052. https://doi.org/10.1109/LPT.2006.883330