Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

C. H. Lin, C. F. Lai, T. S. Ko, H. W. Huang, H. C. Kuo, Y. Y. Hung, K. M. Leung, C. C. Yu, R. J. Tsai, C. K. Lee, T. C. Lu, S. C. Wang

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

Original languageEnglish
Pages (from-to)2050-2052
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number19
DOIs
Publication statusPublished - 2006 Oct 1

Fingerprint

Tin oxides
indium oxides
Indium
tin oxides
reflectors
Light emitting diodes
Multilayers
light emitting diodes
chips
augmentation
output
Photonics
Mirrors
Energy gap
photonics
mirrors
radiation
TiO2-SiO2
indium tin oxide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Lin, C. H. ; Lai, C. F. ; Ko, T. S. ; Huang, H. W. ; Kuo, H. C. ; Hung, Y. Y. ; Leung, K. M. ; Yu, C. C. ; Tsai, R. J. ; Lee, C. K. ; Lu, T. C. ; Wang, S. C. / Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector. In: IEEE Photonics Technology Letters. 2006 ; Vol. 18, No. 19. pp. 2050-2052.
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abstract = "Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31{\%} when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.",
author = "Lin, {C. H.} and Lai, {C. F.} and Ko, {T. S.} and Huang, {H. W.} and Kuo, {H. C.} and Hung, {Y. Y.} and Leung, {K. M.} and Yu, {C. C.} and Tsai, {R. J.} and Lee, {C. K.} and Lu, {T. C.} and Wang, {S. C.}",
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Lin, CH, Lai, CF, Ko, TS, Huang, HW, Kuo, HC, Hung, YY, Leung, KM, Yu, CC, Tsai, RJ, Lee, CK, Lu, TC & Wang, SC 2006, 'Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector', IEEE Photonics Technology Letters, vol. 18, no. 19, pp. 2050-2052. https://doi.org/10.1109/LPT.2006.883330

Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector. / Lin, C. H.; Lai, C. F.; Ko, T. S.; Huang, H. W.; Kuo, H. C.; Hung, Y. Y.; Leung, K. M.; Yu, C. C.; Tsai, R. J.; Lee, C. K.; Lu, T. C.; Wang, S. C.

In: IEEE Photonics Technology Letters, Vol. 18, No. 19, 01.10.2006, p. 2050-2052.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhancement of InGaN-GaN indium-tin-oxide flip-chip light-emitting diodes with TiO2-SiO2 multilayer stack omnidirectional reflector

AU - Lin, C. H.

AU - Lai, C. F.

AU - Ko, T. S.

AU - Huang, H. W.

AU - Kuo, H. C.

AU - Hung, Y. Y.

AU - Leung, K. M.

AU - Yu, C. C.

AU - Tsai, R. J.

AU - Lee, C. K.

AU - Lu, T. C.

AU - Wang, S. C.

PY - 2006/10/1

Y1 - 2006/10/1

N2 - Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

AB - Enhancement of light extraction of GaN-based flipchip indium-tin-oxide light-emitting diodes (FC ITO LEDs) with an omnidirectional reflector (ODR) is presented. The ODR consisting of alternating layers of TiO2 and SiO2 is designed to possess a complete photonic bandgap within the blue region of interest, and it is fabricated by E-beam deposition. At a driving current of 300 mA and a chip size of 1 mm×1 mm, the light output power of the FC ITO LEDs with the ODR reaches 156 mW. This is an enhancement of 31% when compared with the same device with an Al mirror instead. Furthermore, by examining the radiation patterns, the FC ITOLED with theODRshows stronger enhancement around the vertical direction. Our work offers promising potential for enhancing output powers of commercial light-emitting devices.

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