Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

Yen Kuang Kuo, Jih Yuan Chang, Miao Chan Tsai

Research output: Contribution to journalArticle

128 Citations (Scopus)

Abstract

Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.

Original languageEnglish
Pages (from-to)3285-3287
Number of pages3
JournalOptics Letters
Volume35
Issue number19
DOIs
Publication statusPublished - 2010 Oct 1

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light emitting diodes
injection
augmentation
polarization
electrons
high current
simulation

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

Cite this

@article{44a7349381bd4ecaaffaf215a41153e7,
title = "Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer",
abstract = "Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.",
author = "Kuo, {Yen Kuang} and Chang, {Jih Yuan} and Tsai, {Miao Chan}",
year = "2010",
month = "10",
day = "1",
doi = "10.1364/OL.35.003285",
language = "English",
volume = "35",
pages = "3285--3287",
journal = "Optics Letters",
issn = "0146-9592",
publisher = "The Optical Society",
number = "19",

}

TY - JOUR

T1 - Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

AU - Kuo, Yen Kuang

AU - Chang, Jih Yuan

AU - Tsai, Miao Chan

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.

AB - Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.

UR - http://www.scopus.com/inward/record.url?scp=78149259681&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78149259681&partnerID=8YFLogxK

U2 - 10.1364/OL.35.003285

DO - 10.1364/OL.35.003285

M3 - Article

C2 - 20890361

AN - SCOPUS:78149259681

VL - 35

SP - 3285

EP - 3287

JO - Optics Letters

JF - Optics Letters

SN - 0146-9592

IS - 19

ER -