Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

Yen Kuang Kuo, Jih Yuan Chang, Miao Chan Tsai

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Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.

Original languageEnglish
Pages (from-to)3285-3287
Number of pages3
JournalOptics Letters
Issue number19
Publication statusPublished - 2010 Oct 1


All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics

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