Abstract
In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.
| Original language | English |
|---|---|
| Pages (from-to) | 3703-3706 |
| Number of pages | 4 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 43 |
| Issue number | 6 B |
| DOIs | |
| Publication status | Published - 2004 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating. / Cheng, Hsu Chun; Chen, Hsuen Li; Ko, Tsung Shine; Lai, Lee Jene; Ko, Fu Hsiang; Chu, Tieh Chi.
In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 6 B, 01.06.2004, p. 3703-3706.Research output: Contribution to journal › Article
TY - JOUR
T1 - Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating
AU - Cheng, Hsu Chun
AU - Chen, Hsuen Li
AU - Ko, Tsung Shine
AU - Lai, Lee Jene
AU - Ko, Fu Hsiang
AU - Chu, Tieh Chi
PY - 2004/6/1
Y1 - 2004/6/1
N2 - In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.
AB - In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.
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U2 - 10.1143/JJAP.43.3703
DO - 10.1143/JJAP.43.3703
M3 - Article
AN - SCOPUS:4444341678
VL - 43
SP - 3703
EP - 3706
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 B
ER -