Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating

Hsu Chun Cheng, Hsuen Li Chen, Tsung Shine Ko, Lee Jene Lai, Fu Hsiang Ko, Tieh Chi Chu

Research output: Contribution to journalArticle

Abstract

In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.

Original languageEnglish
Pages (from-to)3703-3706
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume43
Issue number6 B
DOIs
Publication statusPublished - 2004 Jun 1

Fingerprint

Extreme ultraviolet lithography
Masks
inspection
masks
lithography
Inspection
coatings
Coatings
absorbers
absorbers (materials)
Buffer layers
charging
buffers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{4bddb0757a7b45a484c0783fab9962a9,
title = "Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating",
abstract = "In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95{\%} by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40{\%} with a large thickness variation even until ±40{\%}. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.",
author = "Cheng, {Hsu Chun} and Chen, {Hsuen Li} and Ko, {Tsung Shine} and Lai, {Lee Jene} and Ko, {Fu Hsiang} and Chu, {Tieh Chi}",
year = "2004",
month = "6",
day = "1",
doi = "10.1143/JJAP.43.3703",
language = "English",
volume = "43",
pages = "3703--3706",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6 B",

}

Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating. / Cheng, Hsu Chun; Chen, Hsuen Li; Ko, Tsung Shine; Lai, Lee Jene; Ko, Fu Hsiang; Chu, Tieh Chi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, No. 6 B, 01.06.2004, p. 3703-3706.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Enhanced extreme ultraviolet lithography mask inspection contrast using fabry-perot type antireflective coating

AU - Cheng, Hsu Chun

AU - Chen, Hsuen Li

AU - Ko, Tsung Shine

AU - Lai, Lee Jene

AU - Ko, Fu Hsiang

AU - Chu, Tieh Chi

PY - 2004/6/1

Y1 - 2004/6/1

N2 - In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.

AB - In this paper, we describe two strategies for solving the low-contrast problem during extreme ultraviolet lithography (EUVL) mask inspection processes. One is the use of single-layer antireflective coating (ARC), and the other is the use of Fabry-Perot-type ARC. The materials of ARC are the same as those of buffer layers, such as SiO2 and Si3N4 which are easy to fabricate. Contrast can be increased up to >95% by adding ARC. For both absorbers, Single-layer Si3N4 ARC and Si 3N4-based Fabry-Perot-type ARC show better performances than SiO2 ARC. Both types of ARC maintain a high contrast at 40% with a large thickness variation even until ±40%. Moreover, the top absorber in Fabry-Perot-type ARC has good conductivity that can eliminate electrical distortion, which is caused by electron charging during e-beam direct writing. The Fabry-Perot-type ARC structure has better contrast and thickness variation tolerance than the single-layer ARC structure. The film materials in Fabry-Perot structure can also be used for various absorber and dielectric materials.

UR - http://www.scopus.com/inward/record.url?scp=4444341678&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4444341678&partnerID=8YFLogxK

U2 - 10.1143/JJAP.43.3703

DO - 10.1143/JJAP.43.3703

M3 - Article

AN - SCOPUS:4444341678

VL - 43

SP - 3703

EP - 3706

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 6 B

ER -