Enhance Extreme UltraViolet Lithography mask inspection contrast by using Fabry-Perot type antireflective coatings

H. C. Cheng, H. L. Chen, T. S. Ko, L. J. Lai, F. H. Ko, T. C. Chu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper, we demonstrate two antireflective coatings (ARC) structures enable the absorber stacks to meet the exposure and inspection requirements at the same time. The absorber stack is comprised of TaN or Cr and a single-layer antireflective coatings. Si/sub 3/N/sub 4/ layer is shown with lower reflectance and higher inspection contrast than SiO/sub 2/ layer. Fabry-Perot type ARC structures perform better contrast and thickness variation tolerance than the single-layer ARC structure.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-95
Number of pages2
ISBN (Electronic)4891140402, 9784891140403
DOIs
Publication statusPublished - 2003 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2003 - Tokyo, Japan
Duration: 2003 Oct 292003 Oct 31

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2003 - 2003 International Microprocesses and Nanotechnology Conference, MNC 2003

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2003
CountryJapan
CityTokyo
Period03-10-2903-10-31

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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