Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-x Inx P multilayers

Yu Li Tsai, Ray Hua Horng, Po Liang Liu, Ming Chun Tseng, Der Yuh Lin, Dong Sing Wuu

Research output: Contribution to journalArticle

Abstract

In this paper, we report on the influence of compositionally step-graded Ga1-x Inx P multilayers on the microstructural and optical properties of In-rich Ga0.46 In0.54 P film grown on a GaAs substrate. Based on the transmission electron microscope observation, the growth of Ga0.46 In0.54 P on GaAs was found to result in phase separation, which was due to the strain-induced composition pulling effect. This phase separation could be successfully eliminated by the step-graded Ga1-x Inx P multilayers with optimized thickness. The elimination was caused by the sufficient moderation of compressive strain in the subsequently grown Ga0.46 In0.54 P film. The employment of step-graded Ga1-x Inx P multilayers was also helpful in improving compositional uniformity and photoluminescence property of the subsequently grown film. The compositional dependence of the film structure and the ab initio elastic constants were used to show that Ga1-x Inx P multilayers with a systematic increase in the In-rich compositional regime exhibit epitaxial stability.

Original languageEnglish
Article number063517
JournalJournal of Applied Physics
Volume106
Issue number6
DOIs
Publication statusPublished - 2009 Oct 9

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metalorganic chemical vapor deposition
elimination
pulling
elastic properties
electron microscopes
photoluminescence
optical properties

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-x Inx P multilayers",
abstract = "In this paper, we report on the influence of compositionally step-graded Ga1-x Inx P multilayers on the microstructural and optical properties of In-rich Ga0.46 In0.54 P film grown on a GaAs substrate. Based on the transmission electron microscope observation, the growth of Ga0.46 In0.54 P on GaAs was found to result in phase separation, which was due to the strain-induced composition pulling effect. This phase separation could be successfully eliminated by the step-graded Ga1-x Inx P multilayers with optimized thickness. The elimination was caused by the sufficient moderation of compressive strain in the subsequently grown Ga0.46 In0.54 P film. The employment of step-graded Ga1-x Inx P multilayers was also helpful in improving compositional uniformity and photoluminescence property of the subsequently grown film. The compositional dependence of the film structure and the ab initio elastic constants were used to show that Ga1-x Inx P multilayers with a systematic increase in the In-rich compositional regime exhibit epitaxial stability.",
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Elimination of phase separation in metalorganic chemical vapor deposition-grown GaInP epilayers by compositionally step-graded Ga1-x Inx P multilayers. / Tsai, Yu Li; Horng, Ray Hua; Liu, Po Liang; Tseng, Ming Chun; Lin, Der Yuh; Wuu, Dong Sing.

In: Journal of Applied Physics, Vol. 106, No. 6, 063517, 09.10.2009.

Research output: Contribution to journalArticle

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