Abstract
The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.
| Original language | English |
|---|---|
| Pages (from-to) | 24-27 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 108 |
| DOIs | |
| Publication status | Published - 2013 Apr 22 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation. / Cho, Wei Min; Lin, Yow Jon; Chang, Hsing Cheng; Chen, Ya Hui.
In: Microelectronic Engineering, Vol. 108, 22.04.2013, p. 24-27.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation
AU - Cho, Wei Min
AU - Lin, Yow Jon
AU - Chang, Hsing Cheng
AU - Chen, Ya Hui
PY - 2013/4/22
Y1 - 2013/4/22
N2 - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.
AB - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.
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U2 - 10.1016/j.mee.2013.03.074
DO - 10.1016/j.mee.2013.03.074
M3 - Article
AN - SCOPUS:84876236082
VL - 108
SP - 24
EP - 27
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -