Abstract
The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.
Original language | English |
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Pages (from-to) | 24-27 |
Number of pages | 4 |
Journal | Microelectronic Engineering |
Volume | 108 |
DOIs | |
Publication status | Published - 2013 Apr 22 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering