Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

Wei Min Cho; Yow Jon Lin; Hsing Cheng Chang; Ya Hui Chen

doi:10.1016/j.mee.2013.03.074

Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

Wei Min Cho, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

Graduate Institute of Photonics

Research output: Contribution to journal › Article

16 Citations (Scopus)

Abstract

The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

Original language	English
Pages (from-to)	24-27
Number of pages	4
Journal	Microelectronic Engineering
Volume	108
DOIs	https://doi.org/10.1016/j.mee.2013.03.074
Publication status	Published - 2013 Apr 22

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Cite this

Cho, W. M., Lin, Y. J., Chang, H. C., & Chen, Y. H. (2013). Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation. Microelectronic Engineering, 108, 24-27. https://doi.org/10.1016/j.mee.2013.03.074

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title = "Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation",

abstract = "The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.",

author = "Cho, {Wei Min} and Lin, {Yow Jon} and Chang, {Hsing Cheng} and Chen, {Ya Hui}",

year = "2013",

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AU - Cho, Wei Min

AU - Lin, Yow Jon

AU - Chang, Hsing Cheng

AU - Chen, Ya Hui

PY - 2013/4/22

Y1 - 2013/4/22

N2 - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

AB - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

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10.1016/j.mee.2013.03.074