Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

Wei Min Cho, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

Original languageEnglish
Pages (from-to)24-27
Number of pages4
JournalMicroelectronic Engineering
Volume108
DOIs
Publication statusPublished - 2013 Apr 22

Fingerprint

Passivation
passivity
Nanowires
Polymers
Diodes
nanowires
diodes
polymers
electronics
leakage
life (durability)
Charge trapping
Heterojunctions
heterojunctions
trapping
traps
decay
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{7b36bb3a0df14649ab3c7acd63b69f1b,
title = "Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation",
abstract = "The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.",
author = "Cho, {Wei Min} and Lin, {Yow Jon} and Chang, {Hsing Cheng} and Chen, {Ya Hui}",
year = "2013",
month = "4",
day = "22",
doi = "10.1016/j.mee.2013.03.074",
language = "English",
volume = "108",
pages = "24--27",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation. / Cho, Wei Min; Lin, Yow Jon; Chang, Hsing Cheng; Chen, Ya Hui.

In: Microelectronic Engineering, Vol. 108, 22.04.2013, p. 24-27.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic transport for polymer/Si-nanowire arrays/n-type Si diodes with and without Si-nanowire surface passivation

AU - Cho, Wei Min

AU - Lin, Yow Jon

AU - Chang, Hsing Cheng

AU - Chen, Ya Hui

PY - 2013/4/22

Y1 - 2013/4/22

N2 - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

AB - The effect of Si-nanowire (SiNW) surface passivation on electronic transport of heterojunction diodes based on the poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT:PSS) and n-type Si with SiNW arrays was investigated in this study. The PEDOT:PSS/SiNWs/n-type Si diode without SiNW surface passivation shows a poor rectifying behavior with an ideality factor (η) of 7.8 and high leakage. However, the PEDOT:PSS/SiNWs/n-type Si diode with SiNW surface passivation shows a good rectifying behavior with η of 1.7 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of a combined effect of the formation of Si-O bonds and the removal of the short-lifetime charge traps. Note that SiNW surface passivation plays a significant role in the photoconduction by providing the contribution of long-lifetime charge trapping to the decay process.

UR - http://www.scopus.com/inward/record.url?scp=84876236082&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84876236082&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2013.03.074

DO - 10.1016/j.mee.2013.03.074

M3 - Article

AN - SCOPUS:84876236082

VL - 108

SP - 24

EP - 27

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -