Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment

Jian Huang Lin, Jian Jhou Zeng, Yow-Jon Lin

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.

Original languageEnglish
Pages (from-to)582-586
Number of pages5
JournalThin Solid Films
Volume550
DOIs
Publication statusPublished - 2014 Jan 1

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Graphite
Schottky diodes
Graphene
graphene
Diodes
leakage
electronics
Interface states
Defect density
defects
Passivation
passivity
Electric properties
Demonstrations
electrical properties
conduction
Fabrication
Defects
fabrication

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.",
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Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment. / Lin, Jian Huang; Zeng, Jian Jhou; Lin, Yow-Jon.

In: Thin Solid Films, Vol. 550, 01.01.2014, p. 582-586.

Research output: Contribution to journalArticle

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