Abstract
Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.
| Original language | English |
|---|---|
| Pages (from-to) | 582-586 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 550 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
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Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment. / Lin, Jian Huang; Zeng, Jian Jhou; Lin, Yow Jon.
In: Thin Solid Films, Vol. 550, 01.01.2014, p. 582-586.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electronic transport for graphene/n-type Si Schottky diodes with and without H2O2 treatment
AU - Lin, Jian Huang
AU - Zeng, Jian Jhou
AU - Lin, Yow Jon
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.
AB - Developing better contacts on Si is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes. The graphene/n-type Si Schottky diode without H2O2 treatment shows a poor rectifying behavior with an ideality factor (η) of 3.5 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with H2O2 treatment shows a good rectifying behavior with η of 1.9 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using H2O2 treatment.
UR - http://www.scopus.com/inward/record.url?scp=84890313600&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84890313600&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.11.079
DO - 10.1016/j.tsf.2013.11.079
M3 - Article
AN - SCOPUS:84890313600
VL - 550
SP - 582
EP - 586
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -