Electronic transport and Schottky barrier heights of p-type CuAlO 2 Schottky diodes

Yow-Jon Lin, Jie Luo, Hao Che Hung

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10 Citations (Scopus)


A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qB) determined from J-V measurements is lower than that determined from C-V measurements and qB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

Original languageEnglish
Article number193511
JournalApplied Physics Letters
Issue number19
Publication statusPublished - 2013 May 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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