Electronic transport and Schottky barrier heights of p-type CuAlO 2 Schottky diodes

Yow-Jon Lin, Jie Luo, Hao Che Hung

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qB) determined from J-V measurements is lower than that determined from C-V measurements and qB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

Original languageEnglish
Article number193511
JournalApplied Physics Letters
Volume102
Issue number19
DOIs
Publication statusPublished - 2013 May 13

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Schottky diodes
capacitance
electrical measurement
electronics
electric potential
trapping
traps
current density
life (durability)
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qB) determined from J-V measurements is lower than that determined from C-V measurements and qB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.",
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Electronic transport and Schottky barrier heights of p-type CuAlO 2 Schottky diodes. / Lin, Yow-Jon; Luo, Jie; Hung, Hao Che.

In: Applied Physics Letters, Vol. 102, No. 19, 193511, 13.05.2013.

Research output: Contribution to journalArticle

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AB - A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qB) determined from J-V measurements is lower than that determined from C-V measurements and qB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

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