Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer

Yow-Jon Lin, Wen Xiang Lin, Ching Ting Lee, Hsing Cheng Chang

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigated in this study. The tunneling current was induced in the presence of native oxides on the GaN surface, making the thermionic emission (TE) theory inapplicable in this case. We find that the value of the barrier height (BH) calculated using the thermionic field emission (TFE) model is similar to that obtained by capacitance-voltage characteristics. This suggested that the discrepancy between BH according to the TFE and TE model for Au/Ni/n-type GaN Schottky diodes could be attributed to the presence of a native oxide layer at the Ni/n-type GaN interface and oxygen-induced and nitrogen-vacancy-related states on the GaN surfaces. Further, the characteristics of Schottky diodes improved when the n-type GaN was treated with (NH4)2Sx solution, an effective agent for removing native oxides and reducing surface states.

Original languageEnglish
Pages (from-to)2505-2508
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 A
DOIs
Publication statusPublished - 2006 Apr 7

Fingerprint

Thermionic emission
thermionic emission
electric contacts
Schottky diodes
Diodes
Oxides
oxides
electronics
Field emission
field emission
capacitance-voltage characteristics
Induced currents
Surface states
Vacancies
Capacitance
Nitrogen
nitrogen
Oxygen
Electric potential
oxygen

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer",
abstract = "Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigated in this study. The tunneling current was induced in the presence of native oxides on the GaN surface, making the thermionic emission (TE) theory inapplicable in this case. We find that the value of the barrier height (BH) calculated using the thermionic field emission (TFE) model is similar to that obtained by capacitance-voltage characteristics. This suggested that the discrepancy between BH according to the TFE and TE model for Au/Ni/n-type GaN Schottky diodes could be attributed to the presence of a native oxide layer at the Ni/n-type GaN interface and oxygen-induced and nitrogen-vacancy-related states on the GaN surfaces. Further, the characteristics of Schottky diodes improved when the n-type GaN was treated with (NH4)2Sx solution, an effective agent for removing native oxides and reducing surface states.",
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Electronic transport and Schottky barrier heights of Ni/Au contacts on n-type GaN surface with and without a thin native oxide layer. / Lin, Yow-Jon; Lin, Wen Xiang; Lee, Ching Ting; Chang, Hsing Cheng.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 A, 07.04.2006, p. 2505-2508.

Research output: Contribution to journalArticle

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AU - Lin, Wen Xiang

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AU - Chang, Hsing Cheng

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AB - Effects of a thin native oxide layer on Au/Ni/n-type GaN Schottky diodes were investigated in this study. The tunneling current was induced in the presence of native oxides on the GaN surface, making the thermionic emission (TE) theory inapplicable in this case. We find that the value of the barrier height (BH) calculated using the thermionic field emission (TFE) model is similar to that obtained by capacitance-voltage characteristics. This suggested that the discrepancy between BH according to the TFE and TE model for Au/Ni/n-type GaN Schottky diodes could be attributed to the presence of a native oxide layer at the Ni/n-type GaN interface and oxygen-induced and nitrogen-vacancy-related states on the GaN surfaces. Further, the characteristics of Schottky diodes improved when the n-type GaN was treated with (NH4)2Sx solution, an effective agent for removing native oxides and reducing surface states.

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